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LM3S617-IQN50-C2

Texas Instruments

LM3S617-IQN50-C2 by Texas Instruments

LM3S617-IQN50-C2 by Texas Instruments is a 32-bit microcontroller with Cortex-M3 CPU family, 8KB RAM, and 6 ADC channels. It operates at a max clock frequency of 0.032 MHz and has peripherals like PWM(6) and TIMER(3). Ideal for industrial applications requiring low power mode and connectivity through SSI and UART(2).

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 9,858 parts In-Stock

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Digiode

USA . 622 parts In-Stock

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AZTECH Wire

Italy . 698 parts In-Stock

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$15.615

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Parana Technologies

USA . 1,488 parts In-Stock

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$16.081

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$16.416

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DigiPath Technology Company

USA . 207 parts In-Stock

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$17.708

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$16.291

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ChromeModa Solutions

Germany . 4,761 parts In-Stock

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$18.069

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$14.817

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IDEA Electronic Components Group

UK . 315 parts In-Stock

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$18.069

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$17.166

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$16.262

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One Stop Electronics

USA . 1,061 parts In-Stock

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$26.000

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Authorized Procurement Solutions

USA . 148,500 parts In-Stock

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Lixinc

USA . 7,538 parts In-Stock

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Corphita

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A-Z Elektronik GmbH

Germany . 3,821 parts In-Stock

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Kepictronics

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Overview

Elevate your projects with the LM3S617-IQN50-C2 by Texas Instruments, a powerful microcontroller that boasts top-tier quality and reliability. Designed with cutting-edge technology, this device offers seamless integration and exceptional performance for a wide range of applications. With advanced features such as integrated cache and low power mode, this microcontroller is the perfect solution for those seeking high-speed processing and energy efficiency. Trust in Texas Instruments to deliver superior products that exceed expectations, ensuring your projects run smoothly and efficiently every time. Unlock endless possibilities with the LM3S617-IQN50-C2 and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the microcontroller, making it suitable for a wide range of environments.

Integrated Cache: YES

Integrated cache helps improve the performance of the microcontroller by allowing quick access to frequently used data.

Maximum Supply Voltage: 3.6 V

Higher maximum supply voltage allows for flexibility in power supply options.

Bit Size: 32

A higher bit size allows for more complex operations and calculations to be performed by the microcontroller.

CPU Family: CORTEX-M3

Belonging to the CORTEX-M3 family ensures reliable performance and compatibility with other components in the same family.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, making the microcontroller efficient and reliable.

Analog To Digital Convertors: 6-Ch 10-Bit

Having 6 channels with 10-bit resolution allows for precise analog to digital conversions, making the microcontroller suitable for applications requiring accurate sensor readings.

Peripheral IC Type: MICROCONTROLLER, RISC

Being a RISC-based microcontroller, it offers efficient and fast processing capabilities, making it suitable for real-time applications.

Speed: 50 rpm

Operating at a speed of 50 rpm, this microcontroller is capable of handling tasks quickly and efficiently.

Technical Specifications

Microcontrollers LM3S617-IQN50-C2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Boundary Scan:

YES

CPU Family:

CORTEX-M3

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

YES

JESD-30 Code:

S-PQFP-G48

JESD-609 Code:

e4

Length:

7 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

0

No. of External Interrupts:

0

No. of I/O Lines:

30

No. of Serial I/Os:

3

No. of Terminals:

48

No. of Timers:

3

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP48,.35SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

8192

ROM Words:

32768

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

110 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

SSI, UART(2)

Peripherals:

PWM(6), TIMER(3), WDT

Analog To Digital Convertors:

6-Ch 10-Bit

Trade Compliance

LM3S617-IQN50-C2 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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