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LM3S300-EQN25-C2

Texas Instruments

LM3S300-EQN25-C2 by Texas Instruments

Texas Instruments' LM3S300-EQN25-C2 is a 32-bit microcontroller with 36 I/O lines, 4096 bytes of RAM, and a max clock frequency of 25 MHz. Ideal for industrial applications, it operates b/w -40 to 105 °C with a supply voltage range of 3-3.6 V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,473 parts In-Stock

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Digiode

USA . 1,775 parts In-Stock

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One Stop Electronics

USA . 910 parts In-Stock

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$9.000

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910

$9.000

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AZTECH Wire

Italy . 757 parts In-Stock

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$9.508

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Parana Technologies

USA . 1,425 parts In-Stock

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$67.736

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ChromeModa Solutions

Germany . 951 parts In-Stock

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$76.108

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$62.409

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951

$76.108

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IDEA Electronic Components Group

UK . 231 parts In-Stock

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$76.108

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$72.303

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$68.497

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231

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$68.497

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QUARKTWIN TECHNOLOGY LTD

USA . 10,715 parts In-Stock

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Microchip USA

USA . 7,950 parts In-Stock

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Corphita

USA . 2,698 parts In-Stock

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DigiPath Technology Company

USA . 1,784 parts In-Stock

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$68.619

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Overview

Unlock the power of innovation with the LM3S300-EQN25-C2 microcontroller by Texas Instruments. As a leader in the industry, Texas Instruments ensures top-quality products that set the standard for performance and reliability. Ideal for a wide range of applications, this microcontroller offers unmatched value and benefits to customers looking to streamline their processes and achieve exceptional results. Experience the advantages of cutting-edge technology and unleash your creativity with the LM3S300-EQN25-C2.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and reliability for the microcontroller, making it suitable for various applications.

Maximum Supply Voltage: 3.6 V

The high maximum supply voltage allows for flexibility in power supply options and compatibility with a wide range of systems.

Bit Size: 32

The 32-bit architecture provides enhanced processing power and efficiency for running complex algorithms and applications.

ADC Channels: YES

The presence of ADC channels enables the microcontroller to interface with analog sensors and inputs, expanding its functionality.

ROM Words: 16384

The large ROM capacity allows for storing a significant amount of program data, enabling the microcontroller to run diverse software applications.

RAM Bytes: 4096

With 4096 bytes of RAM, the microcontroller has sufficient memory for data storage and efficient program execution.

PWM Channels: YES

The availability of PWM channels enables precise control of analog components such as motors and LEDs, enhancing the microcontroller's versatility.

Technology: CMOS

The CMOS technology used in the microcontroller ensures low power consumption and high noise immunity, making it suitable for battery-powered devices and noisy environments.

Technical Specifications

Microcontrollers LM3S300-EQN25-C2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

25 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G48

Length:

7 mm

No. of I/O Lines:

36

No. of Terminals:

48

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP48,.35SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

4096

ROM Words:

16384

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

25 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

65 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7 mm

Peripheral IC Type:

Trade Compliance

LM3S300-EQN25-C2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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