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LM3S2601-IBZ50-A2T

Texas Instruments

LM3S2601-IBZ50-A2T by Texas Instruments

LM3S2601-IBZ50-A2T by Texas Instruments is a 32-bit microcontroller with 131072 ROM words and 32768 RAM bytes. Operating at a max clock frequency of 50 MHz, it is suitable for industrial applications requiring high-speed processing and PWM channels for control systems. With a wide temperature range from -40 to 85°C, this microcontroller offers reliability in various environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 9,645 parts In-Stock

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Digiode

USA . 761 parts In-Stock

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AZTECH Wire

Italy . 806 parts In-Stock

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$10.526

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806

$10.526

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One Stop Electronics

USA . 196 parts In-Stock

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$35.000

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196

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Microchip USA

USA . 2,894 parts In-Stock

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$39.140

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$38.580

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$38.300

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$38.020

2,894

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$38.580

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$38.020

Parana Technologies

USA . 714 parts In-Stock

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$59.899

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714

$59.899

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DigiPath Technology Company

USA . 481 parts In-Stock

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$65.956

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481

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IDEA Electronic Components Group

UK . 1,706 parts In-Stock

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$67.302

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$63.937

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$60.572

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1,706

$67.302

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$60.572

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ChromeModa Solutions

Germany . 1,332 parts In-Stock

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$67.302

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$55.188

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Component Stockers USA

USA . 717 parts In-Stock

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$99.990

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717

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Corphita

USA . 4,586 parts In-Stock

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Overview

Experience the exceptional quality and reliability of Texas Instruments with the LM3S2601-IBZ50-A2T microcontroller. This versatile device offers a wide range of applications, from industrial automation to consumer electronics. With a 32-bit architecture and Flash ROM programmability, this microcontroller provides unmatched performance and flexibility. Trust in Texas Instruments to deliver cutting-edge technology that meets your needs, all while ensuring the highest standards of quality and innovation. Elevate your projects with the LM3S2601-IBZ50-A2T and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and durability for the microcontroller, making it suitable for various applications in different environments.

Maximum Supply Voltage: 2.75 V

The higher maximum supply voltage allows for more flexibility in power supply options and compatibility with a wider range of systems.

Bit Size: 32

With a 32-bit architecture, this microcontroller can handle complex operations and data processing efficiently, making it suitable for advanced applications.

ROM Words: 131072

The large ROM capacity allows for storing a significant amount of code and program data, enabling the microcontroller to support complex algorithms and functions.

RAM Bytes: 32768

The ample RAM capacity enables efficient data storage and processing, facilitating smooth operation and responsiveness of the microcontroller.

Technical Specifications

Microcontrollers LM3S2601-IBZ50-A2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

NO

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

50 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PBGA-B108

JESD-609 Code:

e1

Length:

10 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

60

No. of Terminals:

108

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA108,12X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

32768

ROM Words:

131072

ROM Programmability:

FLASH

Maximum Seated Height:

1.5 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Peripheral IC Type:

Trade Compliance

LM3S2601-IBZ50-A2T Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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