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LM3S1110-IBZ25-A2

Texas Instruments

LM3S1110-IBZ25-A2 by Texas Instruments

LM3S1110-IBZ25-A2 by Texas Instruments is a 32-bit microcontroller with 108 terminals, operating at a max frequency of 0.032 MHz. It features 41 I/O lines, FLASH ROM programmability, and ADC channels. Ideal for industrial applications requiring a compact design and low power consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,248 parts In-Stock

1+ parts

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5,248

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Digiode

USA . 3,122 parts In-Stock

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3,122

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 216 parts In-Stock

1+ parts

$15.790

100+ parts

-

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-

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216

$15.790

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One Stop Electronics

USA . 999 parts In-Stock

1+ parts

$30.000

100+ parts

-

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999

$30.000

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Parana Technologies

USA . 1,601 parts In-Stock

1+ parts

$37.460

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1,601

$37.460

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DigiPath Technology Company

USA . 81 parts In-Stock

1+ parts

$41.248

100+ parts

$37.948

1k+ parts

-

10k+ parts

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81

$41.248

$37.948

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ChromeModa Solutions

Germany . 1,232 parts In-Stock

1+ parts

$42.090

100+ parts

$34.514

1k+ parts

-

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1,232

$42.090

$34.514

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IDEA Electronic Components Group

UK . 209 parts In-Stock

1+ parts

$42.090

100+ parts

$39.986

1k+ parts

$37.881

10k+ parts

-

209

$42.090

$39.986

$37.881

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Microchip USA

USA . 2,267 parts In-Stock

1+ parts

$47.420

100+ parts

$46.750

1k+ parts

$46.410

10k+ parts

$46.070

2,267

$47.420

$46.750

$46.410

$46.070

Corphita

USA . 3,020 parts In-Stock

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3,020

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Overview

Unlock the power of innovation with the LM3S1110-IBZ25-A2 microcontroller by Texas Instruments. Designed with precision and reliability in mind, this product offers a wide range of applications in various industries. With its advanced features and high-performance capabilities, customers can trust in the quality and value that Texas Instruments brings to the table. Experience seamless operation and enhanced functionality with this cutting-edge microcontroller, setting new standards for efficiency and performance in your projects. Elevate your creations with the LM3S1110-IBZ25-A2 and witness the difference that superior technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body provides durability and protects the microcontroller components.

Surface Mount: YES

Being surface mountable makes the integration of this microcontroller easier on circuit boards.

Maximum Supply Voltage: 2.75 V

Suitable for low power applications and helps in reducing power consumption.

Bit Size: 32

A larger bit size allows for more complex calculations and data processing.

Power Supplies (V): 2.5,3.3

Versatile power supply options for different operating scenarios.

No. of Terminals: 108

Sufficient number of terminals for connecting various components and peripherals.

ADC Channels: YES

Analog-to-digital converter channels allow for interfacing with analog sensors.

RAM Bytes: 16384

Ample RAM storage for data processing and temporary memory storage.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity.

PWM Channels: YES

Pulse width modulation channels for precise control of output signals.

Technical Specifications

Microcontrollers LM3S1110-IBZ25-A2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PBGA-B108

JESD-609 Code:

e1

Length:

10 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

41

No. of Terminals:

108

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA108,12X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

16384

ROM Words:

65536

ROM Programmability:

FLASH

Maximum Seated Height:

1.5 mm

Speed:

25 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Peripheral IC Type:

Trade Compliance

LM3S1110-IBZ25-A2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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