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CC2430F32RTCR

Texas Instruments

CC2430F32RTCR by Texas Instruments

The Texas Instruments CC2430F32RTCR is a telecom IC with 48 terminals in a square chip carrier package. Operating temperature ranges from -40 to 85°C, suitable for industrial use. It features a data rate of 0.25 Mbps and operates at a nominal voltage of 3V, making it ideal for telecom circuit applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,039 parts In-Stock

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Digiode

USA . 1,155 parts In-Stock

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1,155

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LIBRA Elektronik GmbH

Germany . 24 parts In-Stock

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Northwest PG Solutions

USA . 1,784 parts In-Stock

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$3.058

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$3.058

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Parana Technologies

USA . 1,970 parts In-Stock

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$12.440

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$12.879

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$12.440

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$12.879

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DigiPath Technology Company

USA . 1,340 parts In-Stock

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$13.697

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$12.602

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$13.697

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ChromeModa Solutions

Germany . 4,698 parts In-Stock

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$13.977

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$11.461

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$13.977

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IDEA Electronic Components Group

UK . 1,178 parts In-Stock

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$13.977

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$13.278

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$12.579

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1,178

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$12.579

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AZTECH Wire

Italy . 334 parts In-Stock

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$18.314

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334

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One Stop Electronics

USA . 210 parts In-Stock

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$86.000

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QUARKTWIN TECHNOLOGY LTD

USA . 21,973 parts In-Stock

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Metaverse IC Inc.

Canada . 21,265 parts In-Stock

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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Corphita

USA . 1,832 parts In-Stock

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Native Components

USA . 565 parts In-Stock

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$2.697

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565

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$2.697

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Overview

Discover the cutting-edge CC2430F32RTCR by Texas Instruments, a top-of-the-line telecom interface IC that promises unmatched quality and reliability. Manufactured by industry leader Texas Instruments, this product offers exceptional performance and durability. With a wide range of applications in the telecommunications sector, this chip carrier boasts a very thin profile and robust construction, making it ideal for industrial use. Experience seamless connectivity and superior functionality with the CC2430F32RTCR, setting new standards in the telecom IC category. Upgrade your systems today and unlock endless possibilities with this innovative solution.

Feature Benefit Bullets

Surface Mount: YES

Being surface mount compatible makes it easier to integrate this IC into compact telecom devices and saves space on PCBs.

Package Style: CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The combination of chip carrier, heat sink/slug, and very thin profile package styles allows for efficient heat dissipation and ensures optimal performance in telecom applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this IC can withstand harsh environmental conditions common in telecom infrastructure.

Nominal Supply Voltage: 3 V

The nominal supply voltage of 3V is ideal for telecom applications, providing a reliable power source for consistent performance.

Data Rate: 0.25 Mbps

The data rate of 0.25 Mbps ensures efficient data transmission in telecom networks, supporting smooth and uninterrupted communication.

Technical Specifications

Other Function Telecom Interface ICs CC2430F32RTCR attributes and parameters. Explore more Other Function Telecom Interface ICs devices from Texas Instruments

Specs

Data Rate:

.25 Mbps

JESD-30 Code:

S-XQCC-N48

JESD-609 Code:

e4

Length:

7 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7 mm

Trade Compliance

CC2430F32RTCR Telecommunications trade compliance attributes, and parameters.

ECCN

5A992.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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