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AM3352BZCE60

Texas Instruments

AM3352BZCE60 by Texas Instruments

AM3352BZCE60 by Texas Instruments is a 32-bit microprocessor with 131072 RAM words, 64 DMA channels, and 26 MHz clock frequency. Ideal for low power applications in grid arrays, it operates b/w 0-90°C with a supply voltage of 0.95/1.1 V.

Median Price

$11.634

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Texas Instruments

USA . 49,156 parts In-Stock

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$9.137

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$7.981

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Mouser Electronics

USA . 601 parts In-Stock

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$8.100

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601

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Digiode

USA . 805 parts In-Stock

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$8.680

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$8.680

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Nova Conductors

Japan . 750 parts In-Stock

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Vyrian

USA . 8,227 parts In-Stock

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VNN

France . 4,710 parts In-Stock

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Chip Stock

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ComSIT Distribution GmbH

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Distributors (Availability)

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Ampacity Inc.

Singapore . 24,399 parts In-Stock

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$7.770

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Corphita

USA . 1,412 parts In-Stock

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$8.223

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Aranea Global

USA . 1,000 parts In-Stock

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$8.624

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$8.279

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$8.624

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Corohmni

South Africa . 32 parts In-Stock

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$30.651

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$35.697

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$32.484

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$29.272

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Parana Technologies

USA . 1,094 parts In-Stock

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$39.384

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DigiPath Technology Company

USA . 1,081 parts In-Stock

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$43.367

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$39.898

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ChromeModa Solutions

Germany . 5,467 parts In-Stock

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$44.252

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$36.287

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IDEA Electronic Components Group

UK . 1,215 parts In-Stock

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$44.252

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$39.827

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A-Z Elektronik GmbH

Germany . 6,188 parts In-Stock

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Lixinc

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Alle Elektronik GmbH

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Argo Parts USA

USA . 3,862 parts In-Stock

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Perfect Parts

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Authorized Procurement Solutions

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Continental Prestige Electronics

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Futuretech Components

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Kepictronics

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Overview

Experience the power and efficiency of Texas Instruments with the AM3352BZCE60 microprocessor. Designed with top-quality materials and cutting-edge technology, this device offers seamless integration, high performance, and reliability for a wide range of applications. From industrial automation to consumer electronics, this microprocessor delivers value, benefits, and advantages that cater to your specific needs. Trust in Texas Instruments to bring you the best in microprocessor technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material ensures the product is sturdy and long-lasting.

Integrated Cache: YES

Integrated cache helps improve the speed and efficiency of data processing.

Surface Mount: YES

Surface mount technology makes the product suitable for compact and space-constrained designs.

Maximum Supply Voltage: 1.144 V

Efficient power management with a relatively low maximum supply voltage.

On Chip Data RAM Width: 8

8-bit data RAM width allows for faster data processing and storage on the chip.

Address Bus Width: 28

Wide address bus width enables the chip to access a large memory space.

Package Shape: SQUARE

Square package shape ensures efficient use of space and easy integration into circuit boards.

Bit Size: 32

32-bit architecture provides good performance for a wide range of computing tasks.

Power Supplies (V): 0.95/1.1

Support for multiple power supply voltages offers flexibility in power management.

No. of Terminals: 298

High number of terminals allows for connectivity with various other components and peripherals.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

Grid array package style with low profile and fine pitch design facilitates easy mounting and reduces signal interference.

Minimum Supply Voltage: 1.056 V

Low minimum supply voltage helps in reducing power consumption and heat generation.

Maximum Operating Temperature: 90 °C

Wide operating temperature range ensures reliable performance in various environmental conditions.

Minimum Operating Temperature: 0 °C

Can operate in low-temperature environments without any issues.

Terminal Finish: TIN SILVER COPPER

High-quality terminal finish ensures good conductivity and durability.

Terminal Position: BOTTOM

Bottom terminal placement allows for easy and secure installation on circuit boards.

Maximum Seated Height: 1.3 mm

Low seated height makes it suitable for slim and compact device designs.

RAM Words: 131072

Large RAM capacity allows for efficient data storage and processing.

Width: 13 mm

Compact width makes it suitable for small form factor devices.

Boundary Scan: YES

Boundary scan feature helps in testing and debugging the chip during manufacturing and maintenance.

External Data Bus Width: 16

16-bit external data bus width enables fast data transfer between the chip and external components.

Maximum Clock Frequency: 26 MHz

High clock frequency allows for fast processing and execution of instructions.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a sufficient time during manufacturing processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance ensures reliability during the soldering process.

Length: 13 mm

Compact length makes it suitable for space-constrained designs.

Peripheral IC Type: MICROPROCESSOR, RISC

RISC architecture in a microprocessor design offers high performance and efficiency.

Technology: CMOS

CMOS technology provides low power consumption and high-speed operation.

Terminal Form: BALL

Ball terminal form allows for easy soldering and reliable electrical connections.

Maximum Supply Current: 400 mA

Support for high supply current ensures stability and reliable operation.

Nominal Supply Voltage: 1.1 V

Stable nominal supply voltage for consistent performance.

No. of DMA Channels: 64

High number of DMA channels allows for efficient data transfer and processing.

Terminal Pitch: 0.65 mm

Fine terminal pitch enables high-density mounting on circuit boards.

Format: FIXED POINT

Fixed-point format offers efficient computation and processing capabilities.

Moisture Sensitivity Level (MSL): 3

MSL 3 indicates moderate sensitivity to moisture, suitable for standard handling and storage conditions.

Speed: 600 rpm

High-speed processing capability for quick and efficient computing tasks.

Low Power Mode: YES

Low power mode feature helps in reducing energy consumption and extending battery life in portable devices.

Technical Specifications

Microprocessors AM3352BZCE60 attributes and parameters. Explore more Microprocessors devices from Texas Instruments

Specs

Address Bus Width:

28

Bit Size:

32

Boundary Scan:

YES

Maximum Clock Frequency:

26 MHz

External Data Bus Width:

16

Format:

FIXED POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B298

JESD-609 Code:

e1

Length:

13 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

64

No. of Terminals:

298

On Chip Data RAM Width:

8

Maximum Operating Temperature:

90 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA298,19X19,25

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

0.95/1.1

Qualification:

Not Qualified

RAM Words:

131072

Maximum Seated Height:

1.3 mm

Speed:

600 rpm

Sub-Category:

Microprocessors

Maximum Supply Current:

400 mA

Maximum Supply Voltage:

1.144 V

Minimum Supply Voltage:

1.056 V

Nominal Supply Voltage:

1.1 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

13 mm

Peripheral IC Type:

Trade Compliance

AM3352BZCE60 Peripheral ICs trade compliance attributes, and parameters.

ECCN

5A992.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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