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AM2631CNEGHAZCZR

Texas Instruments

AM2631CNEGHAZCZR by Texas Instruments

Texas Instruments AM2631CNEGHAZCZR microcontroller features Cortex-R5F CPU, 22-bit address bus, 8-bit on-chip RAM, and 16-bit external data bus. With CAN, I2C, SPI connectivity and 30 ADC channels, it's ideal for automotive control systems requiring low power mode and high-speed processing up to 25 MHz. The package is a grid array with a low profile of 1.4 mm height suitable for compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 4,355 parts In-Stock

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Vyrian

USA . 2,252 parts In-Stock

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Native Components

USA . 218 parts In-Stock

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$13.056

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218

$13.056

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Northwest PG Solutions

USA . 842 parts In-Stock

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$14.362

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$12.925

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842

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AZTECH Wire

Italy . 630 parts In-Stock

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$15.988

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One Stop Electronics

USA . 1,259 parts In-Stock

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$21.000

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Semicontronic

India . 1,486 parts In-Stock

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$26.000

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$25.350

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$25.220

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Corphita

USA . 2,677 parts In-Stock

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Corohmni

South Africa . 484 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the AM2631CNEGHAZCZR by Texas Instruments. Crafted with precision and expertise, this microcontroller offers unparalleled performance and reliability, making it the perfect choice for a wide range of applications. From automotive to industrial automation, this versatile product is designed to exceed expectations. Experience seamless connectivity, enhanced functionality, and optimized efficiency with this state-of-the-art solution. Elevate your projects and revolutionize your designs with the AM2631CNEGHAZCZR - where quality meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the microcontroller, ensuring a longer lifespan.

Integrated Cache: YES

Enhances the performance by storing frequently accessed data for quicker access.

Maximum Supply Voltage: 1.26 V

Allows for efficient power usage while providing enough voltage for operation.

Address Bus Width: 22

Enables efficient communication between memory and processing units, improving overall performance.

DAC Channels: YES

Enables the microcontroller to convert digital signals to analog signals, expanding its compatibility with various devices.

Maximum Clock Frequency: 25 MHz

Provides high-speed processing capabilities, making it suitable for tasks that require real-time data processing.

Connectivity: CAN(4), FSI(4), I2C(4), LIN(5), SDMMC, SPI(5), QSPI, UART(6)

Offers a wide range of connectivity options, allowing the microcontroller to interface with various devices and communication protocols.

Technical Specifications

Microcontrollers AM2631CNEGHAZCZR attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Additional Features:

256KBYTES TCM MEMORY ALSO AVAILABLE

Address Bus Width:

22

Boundary Scan:

YES

CPU Family:

CORTEX-R5F

Maximum Clock Frequency:

25 MHz

DAC Channels:

YES

DMA Channels:

YES

External Data Bus Width:

16

Format:

FLOATING POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B324

Length:

15 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

1

No. of I/O Lines:

140

No. of Serial I/Os:

19

No. of Terminals:

324

On Chip Data RAM Width:

8

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA324,18X18,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

RAM Bytes:

2097152

ROM Words:

0

ROM Programmability:

MROM

Maximum Seated Height:

1.4 mm

Speed:

400 rpm

Maximum Supply Current:

200 mA

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

15 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

CAN(4), FSI(4), I2C(4), LIN(5), SDMMC, SPI(5), QSPI, UART(6)

Peripherals:

CAP(10), COMPARATOR(20), DMA, PWM(32), WDT

Analog To Digital Convertors:

30-Ch 12-Bit

Digital To Analog Convertors:

1-Ch 12-Bit

Trade Compliance

AM2631CNEGHAZCZR Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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