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STL72-AP

STMicroelectronics

STL72-AP by STMicroelectronics

STL72-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for various electronic circuits requiring reliable performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ComSIT Distribution GmbH

Germany . 30,000 parts In-Stock

1+ parts

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30,000

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Anansix

USA . 2,010 parts In-Stock

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2,010

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Digiode

USA . 551 parts In-Stock

1+ parts

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551

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Vyrian

USA . 371 parts In-Stock

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371

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,221 parts In-Stock

1+ parts

$1.350

100+ parts

-

1k+ parts

$1.215

10k+ parts

-

1,221

$1.350

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$1.215

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MKK Technologies

India . 29 parts In-Stock

1+ parts

$2.538

100+ parts

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29

$2.538

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DigiPath Technology Company

USA . 29 parts In-Stock

1+ parts

$2.538

100+ parts

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29

$2.538

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Corphita

USA . 3,590 parts In-Stock

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3,590

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Parana Technologies

USA . 2,101 parts In-Stock

1+ parts

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$1.614

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2,101

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$1.614

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Overview

Unlock unparalleled performance with the STL72-AP from STMicroelectronics, a trusted leader in innovation. This NPN small signal transistor excels in switching applications, ensuring reliability and efficiency for your electronic designs. With its robust construction and high-temperature tolerance, it meets demanding conditions while delivering exceptional power management. Elevate your projects with a component designed for quality, making it the perfect choice for engineers seeking durability and value in every circuit.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability, reducing the likelihood of damage during handling and operation.

Polarity or Channel Type: NPN

The NPN configuration is widely used, offering versatility in various applications, particularly in switching circuits.

Configuration: SINGLE

A single configuration allows for compact designs, making the transistor ideal for space-constrained applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor provides efficient operation in control and automation tasks.

Package Shape: ROUND

The round package shape can enhance thermal performance and ease of mounting in various circuit designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust connections, making this transistor suitable for high-reliability applications.

No. of Terminals: 3

Having three terminals allows for simple circuit configurations and easier integration into existing designs.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this transistor can handle substantial load, making it reliable for diverse applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style enhances heat dissipation capabilities, improving performance at higher operational levels.

Minimum DC Current Gain (hFE): 5

A minimum DC current gain of 5 ensures good amplification capability, making it suitable for signal processing.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for use in demanding environments without compromising performance.

Maximum Collector-Emitter Voltage: 400 V

A high collector-emitter voltage rating enables this transistor to be used in high-voltage applications safely.

Transistor Element Material: SILICON

Silicon as the element material provides excellent electrical properties and efficiency, ensuring reliable performance.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1 A, this transistor is well-suited for a wide range of electronic applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish improves solderability and enhances the long-term reliability of connections.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient space utilization in circuit board layouts.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STL72-AP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STL72-AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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