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STL72G-AP

STMicroelectronics

STL72G-AP by STMicroelectronics

STL72G-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 1W, and operates up to 150 °C. Ideal for various electronic circuits requiring reliable performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,036 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,036

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-

-

-

Digiode

USA . 1,902 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,902

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-

-

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Anansix

USA . 845 parts In-Stock

1+ parts

-

100+ parts

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845

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,621 parts In-Stock

1+ parts

$0.540

100+ parts

-

1k+ parts

$0.486

10k+ parts

-

1,621

$0.540

-

$0.486

-

MKK Technologies

India . 1,135 parts In-Stock

1+ parts

$1.016

100+ parts

-

1k+ parts

-

10k+ parts

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1,135

$1.016

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-

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DigiPath Technology Company

USA . 1,135 parts In-Stock

1+ parts

$1.016

100+ parts

-

1k+ parts

-

10k+ parts

-

1,135

$1.016

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-

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Corphita

USA . 2,065 parts In-Stock

1+ parts

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2,065

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-

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Parana Technologies

USA . 2,020 parts In-Stock

1+ parts

-

100+ parts

$0.646

1k+ parts

-

10k+ parts

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2,020

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$0.646

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Overview

Unlock the potential of your projects with the STL72G-AP from STMicroelectronics, a trusted leader in semiconductor innovation. This durable NPN transistor excels in switching applications, delivering reliable performance even under extreme conditions. With its robust design and efficient power handling, it ensures seamless integration into a variety of electronic devices. Choose STL72G-AP for quality you can count on, boosting your designs while enhancing energy efficiency and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and resistance to environmental factors, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

The NPN configuration allows for efficient signal amplification and switching, which is ideal for many electronic circuits.

Configuration: SINGLE

A single configuration keeps the design simple, making it easier to integrate into compact circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides reliable performance in controlling high-current loads.

Package Shape: ROUND

The round package shape allows for standardized mounting in electronic assemblies, leading to more efficient space utilization.

Terminal Form: THROUGH-HOLE

The through-hole design provides a robust mechanical connection, ensuring better stability in harsh environments.

No. of Terminals: 3

Having three terminals makes the transistor versatile for various circuit configurations, including amplifiers and switches.

Maximum Power Dissipation (Abs): 1 W

A maximum power dissipation of 1 W allows for efficient operation in power-sensitive applications without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style contributes to better heat dissipation and facilitates mounting in compact spaces.

Minimum DC Current Gain (hFE): 5

A minimum DC current gain of 5 ensures that even low input signals can control a more significant output current.

Maximum Operating Temperature: 150 °C

Operating up to 150 °C guarantees stability under high-temperature conditions, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 400 V

With a maximum rating of 400 V, this transistor can handle high voltage applications, adding to its versatility.

Transistor Element Material: SILICON

The use of silicon contributes to better thermal stability and performance, ensuring reliable operation in various conditions.

Maximum Collector Current (IC): 1 A

A maximum collector current rating of 1 A means this transistor can manage significant loads, enhancing its utility in power circuits.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals provides excellent solderability, ensuring reliable electrical connections.

Terminal Position: BOTTOM

The bottom terminal position facilitates easier integration into designs and may help in optimizing space in PCB layouts.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STL72G-AP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STL72G-AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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