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STL73D

STMicroelectronics

STL73D by STMicroelectronics

STL73D by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 1.5W, and operates up to 150 °C. Ideal for efficient circuit designs with through-hole mounting.

Median Price

$0.410

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,276 parts In-Stock

1+ parts

$0.410

100+ parts

$0.228

1k+ parts

$0.195

10k+ parts

$0.187

3,276

$0.410

$0.228

$0.195

$0.187

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,634 parts In-Stock

1+ parts

$0.390

100+ parts

-

1k+ parts

-

10k+ parts

-

4,634

$0.390

-

-

-

Vyrian

USA . 2,385 parts In-Stock

1+ parts

$0.410

100+ parts

-

1k+ parts

-

10k+ parts

-

2,385

$0.410

-

-

-

Anansix

USA . 1,872 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,872

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,354 parts In-Stock

1+ parts

$0.369

100+ parts

-

1k+ parts

-

10k+ parts

-

1,354

$0.369

-

-

-

IDEA Electronic Components Group

UK . 314 parts In-Stock

1+ parts

$0.425

100+ parts

-

1k+ parts

$0.383

10k+ parts

-

314

$0.425

-

$0.383

-

MKK Technologies

India . 819 parts In-Stock

1+ parts

$0.799

100+ parts

-

1k+ parts

-

10k+ parts

-

819

$0.799

-

-

-

DigiPath Technology Company

USA . 819 parts In-Stock

1+ parts

$0.799

100+ parts

-

1k+ parts

-

10k+ parts

-

819

$0.799

-

-

-

Authorized Procurement Solutions

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,000

-

-

-

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Kepictronics

USA . 12,950 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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12,950

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-

-

-

Perfect Parts

USA . 10,698 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,698

-

-

-

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Alle Elektronik GmbH

Germany . 3,278 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

3,278

-

-

-

-

Parana Technologies

USA . 697 parts In-Stock

1+ parts

-

100+ parts

$0.508

1k+ parts

-

10k+ parts

-

697

-

$0.508

-

-

Overview

Unlock the power of innovation with the STL73D from STMicroelectronics, a trusted leader in semiconductor solutions. This high-performance NPN transistor is designed for seamless switching applications, ensuring reliability and efficiency in your projects. With its robust construction and superior heat resistance, the STL73D delivers exceptional performance while simplifying design complexity. Upgrade your electronic systems today and experience the undeniable quality that empowers your success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good durability and protection against environmental factors, making this transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in switching and amplification applications, making this product versatile for different circuit designs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design by reducing the number of components required, which can lead to more compact and efficient layouts.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can handle rapid on/off operations, ideal for control circuits and automation.

Package Shape: ROUND

The round package shape contributes to easier integration into various circuit assemblies and can facilitate heat dissipation.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure reliable connections, making the transistor suitable for both prototyping and permanent installations.

No. of Terminals: 3

Having three terminals typically allows for more flexibility in circuit design, providing options for amplification and switching configurations.

Maximum Power Dissipation (Abs): 1.5 W

A maximum power dissipation of 1.5 W allows for efficient operation in various applications without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is space-effective and can be advantageous in tightly packed electronic designs.

Minimum DC Current Gain (hFE): 4

A minimum DC current gain of 4 ensures sufficient amplification for many applications, making it a practical choice for signal processing.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows this transistor to function reliably in demanding conditions, enhancing its longevity.

Maximum Collector-Emitter Voltage: 400 V

With a maximum collector-emitter voltage of 400 V, this transistor is well-suited for high-voltage applications, providing necessary flexibility in design.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its stability and effectiveness in electronic components.

Maximum Collector Current (IC): 1.5 A

A maximum collector current of 1.5 A supports robust performance in power applications, making it a reliable choice for switching tasks.

Maximum Turn Off Time (toff): 4700 ns

A maximum turn-off time of 4700 ns indicates the transistor's ability to quickly switch off, which is crucial for high-speed applications.

Terminal Finish: MATTE TIN

The matte tin finish enhances corrosion resistance and improves solderability, ensuring reliable performance in PCB assemblies.

Terminal Position: BOTTOM

Bottom terminal positioning can facilitate space-saving designs and improve layout efficiency in PCB applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STL73D attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

4700 ns

Trade Compliance

STL73D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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