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STL72H

STMicroelectronics

STL72H by STMicroelectronics

STL72H by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 400V, a min DC current gain (hFE) of 15, and operates up to 150 °C. Ideal for various electronic circuits requiring reliable performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,753 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,753

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-

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Anansix

USA . 2,703 parts In-Stock

1+ parts

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2,703

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Vyrian

USA . 487 parts In-Stock

1+ parts

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487

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,262 parts In-Stock

1+ parts

$0.725

100+ parts

-

1k+ parts

$0.652

10k+ parts

-

1,262

$0.725

-

$0.652

-

MKK Technologies

India . 2,149 parts In-Stock

1+ parts

$1.363

100+ parts

-

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10k+ parts

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2,149

$1.363

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DigiPath Technology Company

USA . 2,149 parts In-Stock

1+ parts

$1.363

100+ parts

-

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-

10k+ parts

-

2,149

$1.363

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-

-

Parana Technologies

USA . 997 parts In-Stock

1+ parts

-

100+ parts

$0.867

1k+ parts

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-

997

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$0.867

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Corphita

USA . 424 parts In-Stock

1+ parts

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424

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Overview

Elevate your projects with the STL72H NPN transistor from STMicroelectronics, a trusted name in cutting-edge technology. This small signal BJT combines reliability and efficiency, making it perfect for switching applications across diverse industries. Its robust design ensures optimal performance even at high temperatures, offering peace of mind and longevity. Choose STL72H for superior quality and seamless integration into your innovations!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides excellent durability and resistance to environmental factors, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration is ideal for low voltage applications and enhances performance in switching operations, making this transistor highly versatile.

Configuration: SINGLE

Single configuration simplifies integration in circuits, allowing for easy use and a compact design in electronic applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control larger currents, making it an excellent choice for power management.

Package Shape: ROUND

The round package shape can facilitate better heat dissipation, contributing to reliability and performance under varying conditions.

Terminal Form: WIRE

Wire terminal form provides flexibility in mounting and connection, enabling easier integration into circuits with varying layouts.

No. of Terminals: 3

With three terminals, this transistor allows for straightforward circuit connections, making it user-friendly and efficient in design.

Package Style (Meter): CYLINDRICAL

The cylindrical package style optimizes space utilization in electronic designs and provides a familiar form factor for many engineers.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 ensures adequate amplification, making it suitable for various signal processing applications.

Maximum Operating Temperature: 150 °C

Operating at a maximum temperature of 150 °C allows the transistor to function reliably under high-temperature conditions, suitable for demanding environments.

Maximum Collector-Emitter Voltage: 400 V

With a high maximum collector-emitter voltage of 400 V, this transistor can handle significant voltage spikes, contributing to its robustness in switching applications.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material that offers a good balance of performance, cost, and availability, making this transistor highly practical.

Maximum Collector Current (IC): 1 A

Supporting a maximum collector current of 1 A, this transistor is capable of managing significant power levels, making it suitable for a wide range of applications.

Terminal Position: BOTTOM

Bottom terminal positioning can facilitate better thermal management and easier PCB layout integration, enhancing overall circuit performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STL72H attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STL72H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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