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STL73

STMicroelectronics

STL73 by STMicroelectronics

STL73 by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 1.1W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient signal processing in compact circuits.

Median Price

$1.070

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 4,910 parts In-Stock

1+ parts

$1.070

100+ parts

$0.437

1k+ parts

$0.306

10k+ parts

$0.271

4,910

$1.070

$0.437

$0.306

$0.271

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,704 parts In-Stock

1+ parts

$1.016

100+ parts

-

1k+ parts

-

10k+ parts

-

2,704

$1.016

-

-

-

Vyrian

USA . 2,104 parts In-Stock

1+ parts

$1.070

100+ parts

-

1k+ parts

-

10k+ parts

-

2,104

$1.070

-

-

-

Anansix

USA . 1,212 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,212

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 639 parts In-Stock

1+ parts

$0.939

100+ parts

-

1k+ parts

$0.845

10k+ parts

-

639

$0.939

-

$0.845

-

Corphita

USA . 1,809 parts In-Stock

1+ parts

$0.963

100+ parts

-

1k+ parts

-

10k+ parts

-

1,809

$0.963

-

-

-

MKK Technologies

India . 956 parts In-Stock

1+ parts

$1.766

100+ parts

-

1k+ parts

-

10k+ parts

-

956

$1.766

-

-

-

DigiPath Technology Company

USA . 956 parts In-Stock

1+ parts

$1.766

100+ parts

-

1k+ parts

-

10k+ parts

-

956

$1.766

-

-

-

Microchip USA

USA . 470 parts In-Stock

1+ parts

$4.550

100+ parts

-

1k+ parts

-

10k+ parts

-

470

$4.550

-

-

-

Component Stockers USA

USA . 246 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

246

$99.990

-

-

-

RC Electronics

USA . 26,100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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26,100

-

-

-

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Infinite Electronics LLP (Excess)

. 25,008 parts In-Stock

1+ parts

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100+ parts

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25,008

-

-

-

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A-Z Elektronik GmbH

Germany . 7,445 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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7,445

-

-

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Perfect Parts

USA . 5,594 parts In-Stock

1+ parts

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100+ parts

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5,594

-

-

-

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Kepictronics

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

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5,000

-

-

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Assy Fe

Spain . 5,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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5,000

-

-

-

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Alle Elektronik GmbH

Germany . 4,910 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,910

-

-

-

-

Parana Technologies

USA . 2,319 parts In-Stock

1+ parts

-

100+ parts

$1.123

1k+ parts

-

10k+ parts

-

2,319

-

$1.123

-

-

Overview

Experience unparalleled performance with the STL73 from STMicroelectronics, a trusted leader in semiconductor innovation. This NPN small signal transistor excels in switching applications, ensuring efficiency and reliability for your electronic projects. With its robust design capable of withstanding high temperatures and voltages, the STL73 guarantees long-lasting durability. Elevate your circuits with this versatile component, backed by STMicroelectronics' commitment to quality and customer satisfaction!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides durability and helps in thermal management, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used, offering good performance in switching applications and better efficiency in many circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces layout complexity, making it ideal for compact applications.

Transistor Application: SWITCHING

Optimized for switching applications, this product enables efficient operation in digital circuits, timers, and relays, enhancing overall system performance.

Package Shape: ROUND

The round package shape tends to facilitate robust soldering and more reliable connections on PCBs, contributing to the longevity of the device.

Terminal Form: WIRE

Wire terminals allow for easy integration into various circuit designs, providing flexibility in mounting and connections.

No. of Terminals: 3

With three terminals, this BJT is straightforward to implement in common emitter or collector configurations, making it versatile for different uses.

Maximum Power Dissipation (Abs): 1.1 W

A maximum power dissipation of 1.1 W allows the transistor to operate efficiently without overheating, enhancing its reliability.

Package Style (Meter): CYLINDRICAL

The cylindrical package style allows for efficient space usage and can be advantageous in certain mounting scenarios.

Minimum DC Current Gain (hFE): 4

A minimum DC current gain of 4 ensures adequate amplification, making this transistor suitable for a variety of signal applications.

Maximum Operating Temperature: 150 °C

Operating at temperatures up to 150 °C allows this transistor to function in demanding environments, providing reliability in high-temperature applications.

Maximum Collector-Emitter Voltage: 400 V

A high maximum collector-emitter voltage of 400 V allows this transistor to be used in high-voltage applications, increasing its versatility.

Transistor Element Material: SILICON

Silicon material ensures good thermal stability and efficiency, as well as compatibility with standard electronic and semiconductor technologies.

Maximum Collector Current (IC): 1.5 A

With a maximum collector current of 1.5 A, this transistor can drive substantial loads, making it suitable for various switching applications.

Maximum Turn Off Time (toff): 4700 ns

A maximum turn-off time of 4700 ns enables the transistor to be efficiently used in high-speed switching applications.

Terminal Finish: MATTE TIN

The matte tin finish improves solderability and protects against oxidation, which enhances the reliability of the connections.

Terminal Position: BOTTOM

Bottom terminal positioning is conducive for compact designs, allowing for efficient space utilization on printed circuit boards.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STL73 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

4700 ns

Trade Compliance

STL73 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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