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STL71H

STMicroelectronics

STL71H by STMicroelectronics

STL71H by STMicroelectronics is an NPN small signal BJT designed for switching applications. It features a max collector-emitter voltage of 400V, a min DC current gain (hFE) of 15, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,894 parts In-Stock

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4,894

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Vyrian

USA . 3,522 parts In-Stock

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3,522

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Anansix

USA . 1,667 parts In-Stock

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1,667

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,689 parts In-Stock

1+ parts

$1.512

100+ parts

-

1k+ parts

$1.361

10k+ parts

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1,689

$1.512

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$1.361

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MKK Technologies

India . 1,956 parts In-Stock

1+ parts

$2.844

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1,956

$2.844

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DigiPath Technology Company

USA . 1,956 parts In-Stock

1+ parts

$2.844

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1,956

$2.844

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Corphita

USA . 4,505 parts In-Stock

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4,505

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Parana Technologies

USA . 1,619 parts In-Stock

1+ parts

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$1.808

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1,619

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$1.808

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Overview

Experience unmatched reliability and performance with the STL71H from STMicroelectronics, a leader in cutting-edge semiconductor technology. This NPN small signal transistor is designed for efficient switching applications, ensuring your projects run smoothly and effectively. With its robust construction and high-temperature tolerance, it stands out in various industries, delivering exceptional value and durability that you can trust for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy packaging provides durability and resistance to environmental factors, making it suitable for various applications in different conditions.

Polarity or Channel Type: NPN

NPN transistors are widely used in digital and analog circuits, making this transistor versatile for switching and amplification applications.

Configuration: SINGLE

A single configuration allows for simple designs in circuits, reducing complexity and enhancing reliability in applications.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor can efficiently control high voltages and currents, making it ideal for power management.

Package Shape: ROUND

The round shape can facilitate easier integration into various circuit designs, allowing for efficient space utilization on PCBs.

Terminal Form: WIRE

Wire terminals provide flexibility in mounting and soldering, ensuring secure connections in diverse applications.

No. of Terminals: 3

With three terminals, this transistor can easily be integrated into circuits for a variety of configurations, simplifying design.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is compact and can effectively dissipate heat, which is essential for maintaining performance in high-power applications.

Minimum DC Current Gain (hFE): 15

A minimum gain of 15 ensures effective amplification in circuits, allowing for optimal performance in small signal applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can function effectively in extreme conditions, enhancing reliability in demanding environments.

Maximum Collector-Emitter Voltage: 400 V

This high voltage rating expands the range of applications, allowing it to be used in high-voltage switching scenarios safely.

Transistor Element Material: SILICON

Silicon as a material provides excellent thermal stability and efficiency at high frequencies, ensuring performance consistency.

Maximum Collector Current (IC): 0.6 A

A maximum collector current of 0.6 A makes it suitable for moderately powered applications, ensuring versatility and compatibility.

Terminal Position: BOTTOM

Bottom terminal positioning can simplify PCB layout and assembly, making it easier to integrate into various circuit designs.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STL71H attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STL71H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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