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STL73D-L-AP

STMicroelectronics

STL73D-L-AP by STMicroelectronics

STL73D-L-AP by STMicroelectronics is a NPN BJT with max. Vce of 400V and Ic of 1.5A, ideal for switching applications. Features include hFE of min. 10, toff of max. 4700ns, and a single configuration with built-in diode in a cylindrical package style for through-hole mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,621 parts In-Stock

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4,621

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Digiode

USA . 3,762 parts In-Stock

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3,762

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Anansix

USA . 693 parts In-Stock

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693

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 258 parts In-Stock

1+ parts

$1.356

100+ parts

-

1k+ parts

$1.220

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258

$1.356

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$1.220

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MKK Technologies

India . 1,771 parts In-Stock

1+ parts

$2.550

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1,771

$2.550

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DigiPath Technology Company

USA . 1,771 parts In-Stock

1+ parts

$2.550

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1,771

$2.550

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Corphita

USA . 2,228 parts In-Stock

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2,228

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Parana Technologies

USA . 1,177 parts In-Stock

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$1.621

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1,177

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$1.621

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Overview

Upgrade your electronic projects with the STL73D-L-AP by STMicroelectronics, a top-quality NPN bipolar junction transistor designed for switching applications. With a maximum collector-emitter voltage of 400V and a maximum collector current of 1.5A, this transistor offers reliable performance and durability. Its single configuration with a built-in diode simplifies circuit design, making it ideal for a wide range of applications. Trust STMicroelectronics for cutting-edge technology and superior quality components that deliver exceptional value and performance to customers. Elevate your projects today with the STL73D-L-AP!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan and better performance in various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in digital and analog circuits, making this product versatile for a wide range of applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more efficient switching and protection against reverse voltage spikes, improving overall reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it ideal for devices that require fast switching speeds and high efficiency.

Package Shape: ROUND

The round shape allows for easier mounting and integration into circuits, providing convenience for assembly and maintenance.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure connections and easy soldering, ensuring stable and reliable electrical connections.

No. of Terminals: 3

Having 3 terminals allows for more flexibility in circuit design and connectivity options, enabling customization for specific applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides compactness and efficient use of space, making it suitable for small electronic devices and PCBs.

Minimum DC Current Gain (hFE): 10

A minimum DC current gain of 10 ensures reliable amplification and signal processing in various circuits, enhancing overall performance.

Maximum Collector-Emitter Voltage: 400 V

With a maximum voltage rating of 400V, this transistor can handle higher voltage levels, making it suitable for power applications and circuits.

Transistor Element Material: SILICON

Silicon transistors are known for their high efficiency and reliability, making them a popular choice for a wide range of electronic applications.

Maximum Collector Current (IC): 1.5 A

With a maximum current rating of 1.5A, this transistor can handle moderate power levels, making it suitable for various switching and amplification tasks.

Maximum Turn Off Time (toff): 4700 ns

The maximum turn-off time of 4700ns ensures fast and efficient switching speeds, reducing power consumption and improving overall circuit performance.

Terminal Position: BOTTOM

Having the terminal position at the bottom makes it easier to mount and connect in circuits, providing convenience during installation and maintenance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STL73D-L-AP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

4700 ns

Trade Compliance

STL73D-L-AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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