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SGS130

STMicroelectronics

SGS130 by STMicroelectronics

STMicroelectronics' SGS130 is a NPN BJT transistor with Darlington configuration, built-in diode, and resistor. It has a max VCEsat of 3V, hFE of 1000, and can handle up to 8A collector current. Ideal for switching applications with a max power dissipation of 70W at 150 °C operating temperature.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,746 parts In-Stock

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Digiode

USA . 1,080 parts In-Stock

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1,080

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Anansix

USA . 488 parts In-Stock

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488

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 789 parts In-Stock

1+ parts

$1.743

100+ parts

-

1k+ parts

$1.569

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789

$1.743

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$1.569

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MKK Technologies

India . 939 parts In-Stock

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$3.278

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939

$3.278

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DigiPath Technology Company

USA . 939 parts In-Stock

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$3.278

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939

$3.278

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Corphita

USA . 4,606 parts In-Stock

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4,606

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Parana Technologies

USA . 866 parts In-Stock

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$2.084

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866

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$2.084

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Overview

Elevate your power management solutions with the high-quality SGS130 Power Bipolar Junction Transistor by STMicroelectronics. This NPN Darlington transistor comes with a built-in diode and resistor, making it ideal for switching applications. With a maximum VCEsat of only 3V, this transistor offers superior performance and efficiency. Whether you're looking to optimize your power control systems or enhance your electronic designs, the SGS130 is the perfect choice. Trust in STMicroelectronics' reputation for excellence and innovation, and experience the value and benefits that this transistor brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic body material makes the transistor lightweight and durable, suitable for portable or high-vibration applications.

Polarity or Channel Type: NPN

NPN configuration allows for easy interfacing with microcontrollers and other digital logic circuits.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration provides high current gain and built-in diode and resistor offer added protection and convenience in circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in on/off control circuits.

Maximum VCEsat: 3 V

Low VCEsat minimizes power loss in saturation, improving overall power efficiency.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement on circuit boards and efficient use of space.

Terminal Form: THROUGH-HOLE

Through-hole terminals are easily soldered onto PCBs, providing a secure and reliable connection.

Maximum Power Dissipation (Abs): 65 W

High absolute power dissipation rating allows for handling high power loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides mechanical stability and easy mounting on heat sinks for improved thermal management.

Maximum Power Dissipation Ambient: 70 W

Even in high ambient temperatures, the transistor can safely dissipate power up to 70W, ensuring reliable operation in various environments.

Minimum DC Current Gain (hFE): 1000

High DC current gain ensures consistent and reliable amplification of input signals.

Maximum Operating Temperature: 150 °C

Wide operating temperature range of up to 150 °C allows for use in diverse thermal conditions.

Maximum Collector-Emitter Voltage: 60 V

High collector-emitter voltage rating ensures safe operation in circuits with higher voltage levels.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making the transistor suitable for various applications.

Maximum Collector Current (IC): 8 A

High collector current rating allows for handling large current loads, making the transistor suitable for power applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability for reliable connections in circuit assemblies.

Terminal Position: SINGLE

Single terminal position simplifies circuit layout and connections, making the transistor easy to integrate into designs.

Case Connection: ISOLATED

Isolated case connection prevents electrical interference and allows for safe and reliable integration into circuit designs.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SGS130 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

70 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

3 V

Trade Compliance

SGS130 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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