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SGS132

STMicroelectronics

SGS132 by STMicroelectronics

STMicroelectronics' SGS132 is a NPN BJT with Darlington configuration, ideal for switching applications. It offers a max VCEsat of 3V and can handle up to 8A of collector current. With a power dissipation of 65W, it operates at temperatures up to 150 °C in a rectangular package with through-hole terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,652 parts In-Stock

1+ parts

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3,652

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Anansix

USA . 2,702 parts In-Stock

1+ parts

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2,702

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Digiode

USA . 1,420 parts In-Stock

1+ parts

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1,420

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,199 parts In-Stock

1+ parts

$1.251

100+ parts

-

1k+ parts

$1.126

10k+ parts

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1,199

$1.251

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$1.126

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MKK Technologies

India . 47 parts In-Stock

1+ parts

$2.353

100+ parts

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47

$2.353

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DigiPath Technology Company

USA . 47 parts In-Stock

1+ parts

$2.353

100+ parts

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47

$2.353

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Parana Technologies

USA . 1,728 parts In-Stock

1+ parts

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100+ parts

$1.496

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1,728

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$1.496

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Corphita

USA . 1,456 parts In-Stock

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1,456

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Overview

Enhance the performance of your electronic devices with the high-quality SGS132 Power Bipolar Junction Transistor by STMicroelectronics. This transistor, known for its NPN polarity and Darlington configuration, is ideal for switching applications. With a maximum VCEsat of 3V and a minimum DC current gain of 1000, this transistor offers unparalleled efficiency and reliability. Whether you are designing consumer electronics or industrial machinery, the SGS132 provides the power and precision you need. Trust STMicroelectronics for innovative solutions that drive your success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials are commonly used in transistors for their durability and reliability, making this product a good choice for robust applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for switching applications, which makes this product suitable for a wide range of circuit designs that require NPN transistors.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain, while the built-in diode and resistor simplify circuit design and reduce the need for additional components, making this product a convenient choice for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for controlling the flow of current in electronic circuits, making it a reliable choice for devices that require efficient power management.

Maximum VCEsat: 3 V

The low VCEsat value indicates minimal voltage drop when the transistor is conducting, leading to higher efficiency and reduced power dissipation in the circuit.

Package Shape: RECTANGULAR

Rectangular packages are space-efficient and easily mountable on circuit boards, making this product suitable for compact electronic devices or applications with limited space.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections to the circuit board, ensuring reliable performance and making this product a good choice for applications where stability and durability are crucial.

Maximum Power Dissipation (Abs): 65 W

With a high maximum power dissipation rating, this transistor can handle significant power levels without overheating, making it a reliable choice for applications that require high-power handling capabilities.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy installation and secure mounting of the transistor, making it a convenient choice for applications where stability and ease of assembly are important.

Maximum Power Dissipation Ambient: 70 W

The high maximum power dissipation in ambient conditions ensures that this transistor can operate efficiently even in challenging environments with varying temperature levels, making it a reliable choice for demanding applications.

Minimum DC Current Gain (hFE): 1000

With a high minimum DC current gain, this transistor provides consistent and reliable amplification of current signals, making it a suitable choice for applications that require precise current control.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature rating allows this transistor to function reliably in elevated temperature environments, making it a suitable choice for applications that require extended operating conditions.

Maximum Collector-Emitter Voltage: 100 V

With a high maximum collector-emitter voltage rating, this transistor can handle high voltage levels without breakdown, making it a reliable choice for applications that require voltage switching or control.

Transistor Element Material: SILICON

Silicon transistors are known for their high performance and reliability, making this product a durable choice for applications that require long-term stability and consistent performance.

Maximum Collector Current (IC): 8 A

The high maximum collector current rating allows this transistor to handle high current levels with ease, making it suitable for applications that require efficient current control and switching capabilities.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides reliable solder connections and prevents corrosion, ensuring long-term stability and performance in the circuit, making this product a durable choice for demanding applications.

Terminal Position: SINGLE

The single terminal position simplifies circuit connections and ensures easy installation, making this product a convenient choice for applications that require straightforward and efficient circuit design.

Case Connection: ISOLATED

Isolated case connection helps prevent short circuits and interference, ensuring reliable performance and safety in the circuit, making this product a suitable choice for applications that require high levels of insulation and protection.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SGS132 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

70 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

3 V

Trade Compliance

SGS132 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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