Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STMicroelectronics' SGS132 is a NPN BJT with Darlington configuration, ideal for switching applications. It offers a max VCEsat of 3V and can handle up to 8A of collector current. With a power dissipation of 65W, it operates at temperatures up to 150 °C in a rectangular package with through-hole terminals.
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$1.496
Corphita
Plastic and epoxy materials are commonly used in transistors for their durability and reliability, making this product a good choice for robust applications.
NPN transistors are commonly used for switching applications, which makes this product suitable for a wide range of circuit designs that require NPN transistors.
The Darlington configuration provides high current gain, while the built-in diode and resistor simplify circuit design and reduce the need for additional components, making this product a convenient choice for switching applications.
Designed specifically for switching applications, this transistor is optimized for controlling the flow of current in electronic circuits, making it a reliable choice for devices that require efficient power management.
The low VCEsat value indicates minimal voltage drop when the transistor is conducting, leading to higher efficiency and reduced power dissipation in the circuit.
Rectangular packages are space-efficient and easily mountable on circuit boards, making this product suitable for compact electronic devices or applications with limited space.
Through-hole terminals provide secure connections to the circuit board, ensuring reliable performance and making this product a good choice for applications where stability and durability are crucial.
With a high maximum power dissipation rating, this transistor can handle significant power levels without overheating, making it a reliable choice for applications that require high-power handling capabilities.
The flange mount package style allows for easy installation and secure mounting of the transistor, making it a convenient choice for applications where stability and ease of assembly are important.
The high maximum power dissipation in ambient conditions ensures that this transistor can operate efficiently even in challenging environments with varying temperature levels, making it a reliable choice for demanding applications.
With a high minimum DC current gain, this transistor provides consistent and reliable amplification of current signals, making it a suitable choice for applications that require precise current control.
The high maximum operating temperature rating allows this transistor to function reliably in elevated temperature environments, making it a suitable choice for applications that require extended operating conditions.
With a high maximum collector-emitter voltage rating, this transistor can handle high voltage levels without breakdown, making it a reliable choice for applications that require voltage switching or control.
Silicon transistors are known for their high performance and reliability, making this product a durable choice for applications that require long-term stability and consistent performance.
The high maximum collector current rating allows this transistor to handle high current levels with ease, making it suitable for applications that require efficient current control and switching capabilities.
Tin lead terminal finish provides reliable solder connections and prevents corrosion, ensuring long-term stability and performance in the circuit, making this product a durable choice for demanding applications.
The single terminal position simplifies circuit connections and ensures easy installation, making this product a convenient choice for applications that require straightforward and efficient circuit design.
Isolated case connection helps prevent short circuits and interference, ensuring reliable performance and safety in the circuit, making this product a suitable choice for applications that require high levels of insulation and protection.
Power Bipolar Junction Transistors (BJT) SGS132 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics
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SGS132 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.95
SB
8541.29.00.80
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
LM317T
Fairchild Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Output Current-1: 1.5 A; No. of Outputs: 1; Qualification Status: Not Qualified;
FDV304P
Onsemi
The Onsemi FDV304P is a P-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 0.46A and an Operating Temperature range of -55 to 150 °C. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount configurations.
BSS138
Sipex
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 240;
SS14
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 150 Cel;
EU2B-YS3203C
Idec
ROTARY SWITCH;
1N4148
Diotec Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Micro Commercial Components
BAV99WT1G
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Sinyork
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
AT90CAN128-16AU
Atmel
MICROCONTROLLER, RISC; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 64; Package Code: TQFP; Package Shape: SQUARE;
LM358AN
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
NE555D
Texas Instruments
NE555D by Texas Instruments is an 8-terminal IC with a supply voltage range of 4.5V to 16V, suitable for analog waveform generation applications. It operates at temperatures from 0°C to 70°C and has a max supply current of 15mA. The package style is small outline, making it ideal for compact electronic designs.
RN41N-I/RM
Microchip Technology
Microchip Technology's RN41N-I/RM is a telecom IC with 35 terminals, operating from -40 to 85°C. It has a supply voltage of 3.3V and is surface mountable in industrial applications. The package style is rectangular, measuring 13.2mm x 20.1mm with a seated height of 2.2mm, suitable for telecom interface functions.
SMBJ18CA
Semtech
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Sangdest Microelectronics (Nanjing)
DS18B20U+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: SQUARE; Housing: PLASTIC; Minimum Supply Voltage: 3 V;
LM358N
LM358N by Texas Instruments is an operational amplifier with 2 functions, offering a max input offset voltage of 9000 uV and a nominal common mode reject ratio of 85 dB. Widely used in commercial applications, it operates at temperatures ranging from 0 to 70 °C and has a unity gain bandwidth of 1000 kHz.
LM317LMX/NOPB
National Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 8; Package Code: SOP; Terminal Form: GULL WING; Maximum Seated Height: 1.75 mm; Nominal Dropout Voltage-1: 3 V;
Dc Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Terminal Form: GULL WING;
TIP127
General Transistor
PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
2N3055
New England Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
ULN2804A
Sanken Electric
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Transistor Application: SWITCHING; Additional Features: LOGIC LEVEL COMPATIBLE;
MJE350
PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;
TIP112
Diotec Semiconductor Ag
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Power Dissipation Ambient: 2 W;
TIP42C
Central Semiconductor
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP127G
TIP127G by Onsemi is a PNP Power BJT with 100V VCEO, 5A IC, and 65W Ptot. It features a Darlington configuration for amplifier applications. The transistor has a min hFE of 1000 and operates up to 150°C, making it suitable for high-power amplification needs.
TIP42A
Microsemi
PNP; Surface Mount: NO; Maximum Collector Current (IC): 6 A; JESD-609 Code: e0; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE;
D44H-11
Loras Industries
D44H-11 by Loras Industries is a NPN BJT transistor with 50W power dissipation, 80V collector-emitter voltage, and 10A collector current. It is ideal for applications requiring high power amplification in electronic circuits. The package style is flange mount with through-hole terminals, making it suitable for various industrial and commercial uses.
BU508AW
NXP Semiconductors
The NXP Semiconductors BU508AW is a single NPN BJT transistor for switching applications. With a max VCEsat of 1V, it can handle up to 8A collector current and 125W power dissipation. Operating at temperatures up to 150°C, it has a max collector-emitter voltage of 700V making it suitable for high-power electronic circuits.
TIP31C
Crimson Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
TIP120
Panasonic
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT;
TIP110
Inchange Semiconductor
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Body Material: PLASTIC/EPOXY;
TIP147
Nte Electronics
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Package Style (Meter): FLANGE MOUNT;
NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; No. of Elements: 1; Package Shape: RECTANGULAR;
BD139-16
STMicroelectronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A;
TIP32C
Continental Device India
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
MJD45H11T4
Motorola
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;
TIP142T
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; JESD-30 Code: R-PSFM-T3;
NJVMJD340T4G-VF01
NJVMJD340T4G-VF01 by Onsemi is a NPN BJT transistor for switching applications. It has hFE of 30, VCEO of 300V, and IC of 0.5A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance and high operating temperature range from -65 to 150°C.
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SGS100DA020D
Power Bipolar Transistors; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 100 A; Maximum VCEsat: 2 V; Maximum Fall Time (tf): 600 ns; No. of Elements: 1;
SGS110
SGS111
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500;
SGS112
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; No. of Elements: 1;
SGS115
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum VCEsat: 2.5 V;
SGS116
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;
SGS117
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Terminal Form: THROUGH-HOLE;
SGS122
SGS125
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 60 V;
SGS130
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; No. of Elements: 1;
SGS131
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; Terminal Finish: TIN LEAD;
SGS135
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; No. of Elements: 1;
SGS136
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; No. of Terminals: 3;
SGS137
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; Transistor Element Material: SILICON;
SGS150DA020D
Power Bipolar Transistors; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 150 A; Minimum DC Current Gain (hFE): 75; Maximum Fall Time (tf): 800 ns; Maximum Operating Temperature: 150 Cel;
SGS15DB070D
Power Bipolar Transistors; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 23 A; Maximum Operating Temperature: 150 Cel; Minimum DC Current Gain (hFE): 15; No. of Elements: 1;
SGS15DB080D
Power Bipolar Transistors; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 23 A; Maximum Fall Time (tf): 1500 ns; Minimum DC Current Gain (hFE): 15; Maximum Operating Temperature: 150 Cel;
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