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SGS122

STMicroelectronics

SGS122 by STMicroelectronics

SGS122 by STMicroelectronics is a powerful NPN Darlington BJT designed for switching applications. It features a max power dissipation of 65W, a min DC current gain (hFE) of 1000, and operates up to 150 °C. Ideal for high-efficiency circuits with robust performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,908 parts In-Stock

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4,908

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Digiode

USA . 3,495 parts In-Stock

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3,495

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Anansix

USA . 1,307 parts In-Stock

1+ parts

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1,307

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ComSIT Distribution GmbH

Germany . 980 parts In-Stock

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980

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,326 parts In-Stock

1+ parts

$0.362

100+ parts

-

1k+ parts

$0.325

10k+ parts

-

2,326

$0.362

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$0.325

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MKK Technologies

India . 118 parts In-Stock

1+ parts

$0.680

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118

$0.680

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DigiPath Technology Company

USA . 118 parts In-Stock

1+ parts

$0.680

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118

$0.680

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Kepictronics

USA . 27,860 parts In-Stock

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27,860

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Parana Technologies

USA . 1,975 parts In-Stock

1+ parts

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100+ parts

$0.432

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1,975

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$0.432

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Corphita

USA . 889 parts In-Stock

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889

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Overview

Unlock the potential of your designs with the SGS122 from STMicroelectronics, a powerhouse in power transistors. Renowned for its reliability, this NPN Darlington transistor is perfect for demanding switching applications, delivering exceptional performance with minimal footprint. With built-in diode and resistor, it streamlines your designs while ensuring robust operation under high temperatures. Elevate your projects with unparalleled quality and innovation that only STMicroelectronics can provide!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package enhances durability and protects the transistor from environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching applications, providing reliable performance for electronic circuits.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and built-in diode enhances safety against back EMF, making this transistor efficient for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching, this transistor can handle high-speed operations, suitable for a range of electronic devices.

Package Shape: RECTANGULAR

The rectangular shape of the package facilitates easy mounting and heat dissipation, optimizing performance in various setups.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and are easy to solder, ensuring reliable connections in circuit assemblies.

No. of Terminals: 3

With three terminals, this transistor can efficiently manage the collector, emitter, and base connections, simplifying circuit designs.

Maximum Power Dissipation (Abs): 65 W

A high maximum power dissipation capability allows this transistor to operate under heavy loads without overheating, ensuring reliability.

Package Style (Meter): FLANGE MOUNT

Flange mount design provides stable installation and better heat management, making it beneficial for applications requiring high power handling.

Minimum DC Current Gain (hFE): 1000

A high current gain means increased efficiency, enabling this transistor to amplify signals effectively while consuming less input current.

Maximum Operating Temperature: 150 °C

With a high operating temperature threshold, this transistor can function effectively in demanding environments, enhancing versatility in applications.

Maximum Collector-Emitter Voltage: 100 V

The ability to handle up to 100 V ensures the transistor is suitable for a variety of power applications without risk of breakdown.

Transistor Element Material: SILICON

Silicon as the element material provides excellent performance characteristics, making it the standard choice for reliability in electronics.

Maximum Collector Current (IC): 5 A

With a maximum collector current rating of 5 A, this transistor can handle significant loads, making it ideal for various high-power applications.

Terminal Position: SINGLE

Single terminal positioning simplifies design integration into circuits, allowing for easier layout and assembly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SGS122 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

BUILT-IN BIAS RESISTORS

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SGS122 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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