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SGS117

STMicroelectronics

SGS117 by STMicroelectronics

STMicroelectronics' SGS117 is a PNP BJT transistor with Darlington configuration, built-in diode, and resistor. It has a max VCEsat of 2.5V, hFE of 500, and IC of 2A. Ideal for switching applications with a max power dissipation of 50W at 150 °C operating temperature.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,285 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

3,285

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-

-

Anansix

USA . 2,186 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,186

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-

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Digiode

USA . 2,005 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,005

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,184 parts In-Stock

1+ parts

$1.721

100+ parts

-

1k+ parts

$1.549

10k+ parts

-

2,184

$1.721

-

$1.549

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MKK Technologies

India . 1,779 parts In-Stock

1+ parts

$3.237

100+ parts

-

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-

10k+ parts

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1,779

$3.237

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DigiPath Technology Company

USA . 1,779 parts In-Stock

1+ parts

$3.237

100+ parts

-

1k+ parts

-

10k+ parts

-

1,779

$3.237

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-

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Corphita

USA . 4,436 parts In-Stock

1+ parts

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100+ parts

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4,436

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Parana Technologies

USA . 2,375 parts In-Stock

1+ parts

-

100+ parts

$2.058

1k+ parts

-

10k+ parts

-

2,375

-

$2.058

-

-

Overview

The SGS117 by STMicroelectronics is a top-of-the-line Power Bipolar Junction Transistor designed for high-performance switching applications. With a maximum VCEsat of 2.5V and a minimum DC Current Gain of 500, this PNP transistor offers outstanding efficiency and reliability. Its Darlington configuration with built-in diode and resistor ensures seamless operation, while the maximum Collector-Emitter Voltage of 100V makes it suitable for a wide range of projects. Trust STMicroelectronics to deliver quality components that exceed expectations, providing value and benefits to customers in various industries. Upgrade your systems with the SGS117 and experience unmatched performance and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and durability.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, offering versatility.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Integrated diode and resistor simplify circuit design and save space.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Maximum VCEsat: 2.5 V

Low VCEsat minimizes power loss and improves efficiency.

Package Shape: RECTANGULAR

Easy to mount and integrate into circuit boards.

Terminal Form: THROUGH-HOLE

Simplifies soldering and provides a secure connection.

Maximum Power Dissipation (Abs): 50 W

Can handle high power levels without overheating, ensuring reliability.

Package Style (Meter): FLANGE MOUNT

Provides a secure and stable mounting option for the transistor.

Minimum DC Current Gain (hFE): 500

High DC current gain ensures stable and consistent amplification.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for demanding environments.

Maximum Collector-Emitter Voltage: 100 V

Can withstand high voltage levels, expanding the range of possible applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a popular choice in electronics.

Maximum Collector Current (IC): 2 A

Can handle high current levels, suitable for applications requiring higher power.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and conductivity for reliable connections.

Terminal Position: SINGLE

Simplified connection layout for ease of use.

Case Connection: ISOLATED

Isolated case connection enhances safety and reduces the risk of short circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SGS117 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

500

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

50 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

2.5 V

Trade Compliance

SGS117 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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