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SGS125

STMicroelectronics

SGS125 by STMicroelectronics

STMicroelectronics' SGS125 is a PNP BJT transistor with Darlington configuration, ideal for switching applications. It features a max VCEsat of 4V, hFE of 1000, and IC of 5A. With a power dissipation of 65W and operating temperature up to 150 °C, it is suitable for high-power electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,378 parts In-Stock

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3,378

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Vyrian

USA . 2,456 parts In-Stock

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2,456

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Anansix

USA . 736 parts In-Stock

1+ parts

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736

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ComSIT Distribution GmbH

Germany . 79 parts In-Stock

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79

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LittleDiode

UK . 2 parts In-Stock

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2

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 70 parts In-Stock

1+ parts

$0.373

100+ parts

-

1k+ parts

$0.335

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70

$0.373

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$0.335

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MKK Technologies

India . 1,728 parts In-Stock

1+ parts

$0.701

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1,728

$0.701

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DigiPath Technology Company

USA . 1,728 parts In-Stock

1+ parts

$0.701

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1,728

$0.701

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Corphita

USA . 3,295 parts In-Stock

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3,295

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Kepictronics

USA . 1,992 parts In-Stock

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1,992

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Parana Technologies

USA . 1,718 parts In-Stock

1+ parts

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$0.446

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1,718

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$0.446

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Overview

Unleash the power of innovation with the SGS125 by STMicroelectronics. Crafted with precision and expertise, this Power Bipolar Junction Transistor offers unmatched performance and reliability for a wide range of switching applications. With its Darlington configuration, built-in diode, and resistor, this PNP transistor delivers exceptional efficiency and control. Whether you're designing cutting-edge electronics or optimizing your current systems, the SGS125 provides the value, benefits, and advantages you need to succeed. Elevate your projects with STMicroelectronics' commitment to quality and excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and high reliability, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration with other PNP components in circuit design.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design and saves space by integrating additional components.

Transistor Application: SWITCHING

Optimized for switching applications, providing fast switching speeds and high efficiency.

Maximum VCEsat: 4 V

Low VCEsat value results in lower power dissipation and improved efficiency in switching applications.

Package Shape: RECTANGULAR

Facilitates easy mounting and installation on PCBs.

Terminal Form: THROUGH-HOLE

Enables secure connection to PCBs and ensures reliable operation.

No. of Terminals: 3

Simplifies circuit connections and reduces complexity.

Maximum Power Dissipation (Abs): 65 W

Can handle high power dissipation without overheating, ensuring long-term reliability.

Package Style (Meter): FLANGE MOUNT

Provides mechanical stability and facilitates heat dissipation.

Minimum DC Current Gain (hFE): 1000

High DC current gain ensures stable and reliable operation in various circuit configurations.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 60 V

Can handle high voltage levels, expanding the range of applications where the transistor can be used.

Transistor Element Material: SILICON

Provides reliable and consistent performance characteristics over a wide temperature range.

Maximum Collector Current (IC): 5 A

Capable of handling high collector currents, suitable for demanding applications.

Terminal Position: SINGLE

Simplifies circuit layout and connections.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SGS125 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

65 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

4 V

Trade Compliance

SGS125 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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