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SGS115

STMicroelectronics

SGS115 by STMicroelectronics

STMicroelectronics' SGS115 is a PNP BJT transistor with Darlington configuration, ideal for switching applications. It features a max VCEsat of 2.5V, hFE of 500, and can handle up to 2A collector current. With a package style of flange mount and max power dissipation of 50W, it operates at temperatures up to 150 °C.

Median Price

$46.150

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rapid Electronics

USA . 100 parts In-Stock

1+ parts

$46.150

100+ parts

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100

$46.150

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-

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Digiode

USA . 3,494 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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3,494

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Vyrian

USA . 3,426 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,426

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-

-

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Anansix

USA . 2,053 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,053

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,210 parts In-Stock

1+ parts

$0.970

100+ parts

-

1k+ parts

$0.873

10k+ parts

-

1,210

$0.970

-

$0.873

-

MKK Technologies

India . 893 parts In-Stock

1+ parts

$1.823

100+ parts

-

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-

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893

$1.823

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DigiPath Technology Company

USA . 893 parts In-Stock

1+ parts

$1.823

100+ parts

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893

$1.823

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Corphita

USA . 3,958 parts In-Stock

1+ parts

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3,958

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Parana Technologies

USA . 656 parts In-Stock

1+ parts

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100+ parts

$1.159

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656

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$1.159

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Overview

Unleash the power of your electronic projects with the SGS115 by STMicroelectronics. Crafted by a trusted manufacturer in the industry, this Power Bipolar Junction Transistor is a game-changer for switching applications. With a unique configuration featuring a built-in diode and resistor, this PNP transistor offers unparalleled performance and reliability. Whether you're a hobbyist or a professional, the SGS115 delivers maximum power dissipation of 50W and a minimum DC current gain of 500, ensuring seamless operation even in demanding environments. Upgrade your projects today with the SGS115 and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material : PLASTIC/EPOXY

Plastic/epoxy material ensures durability and strength, making the transistor suitable for various applications.

Polarity or Channel Type : PNP

PNP polarity allows for easy integration into circuits and enables efficient switching operations.

Configuration : DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration with built-in diode and resistor provides enhanced performance and simplifies circuit design.

Transistor Application : SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient operation.

Maximum VCEsat : 2.5 V

Low saturation voltage helps in reducing power dissipation and improving overall efficiency.

Package Shape : RECTANGULAR

Rectangular shape makes the transistor easy to mount and integrate into various electronic devices.

Terminal Form : THROUGH-HOLE

Through-hole terminals provide secure connections and are suitable for manual or automated assembly processes.

No. of Terminals : 3

Three terminals make the transistor easy to connect and ensure proper functioning within a circuit.

Maximum Power Dissipation (Abs) : 50 W

High power dissipation capability allows for reliable operation in demanding applications.

Package Style (Meter) : FLANGE MOUNT

Flange mount package style provides mechanical stability and ease of installation in various configurations.

Maximum Power Dissipation Ambient : 50 W

The transistor can dissipate up to 50W of power in ambient conditions, ensuring reliable performance under varying temperatures.

Minimum DC Current Gain (hFE) : 500

High minimum DC current gain ensures consistent and accurate amplification of signals within the circuit.

Maximum Operating Temperature : 150 °C

With a maximum operating temperature of 150 °C, the transistor can be used in high-temperature environments while maintaining stability.

Maximum Collector-Emitter Voltage : 60 V

High maximum collector-emitter voltage rating allows for handling of higher voltage levels within the circuit.

Transistor Element Material : SILICON

Silicon material provides excellent electrical properties, ensuring reliable and high-performance operation of the transistor.

Maximum Collector Current (IC) : 2 A

High maximum collector current rating allows for handling higher currents, making the transistor suitable for various applications.

Terminal Finish : TIN LEAD

Tin lead terminal finish provides corrosion resistance and easy soldering during assembly processes.

Terminal Position : SINGLE

Single terminal position simplifies circuit connection and ensures proper orientation during installation.

Case Connection : ISOLATED

Isolated case connection helps in preventing electrical interference and enhances overall circuit performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SGS115 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

500

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

50 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

2.5 V

Trade Compliance

SGS115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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