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SGS136

STMicroelectronics

SGS136 by STMicroelectronics

STMicroelectronics' SGS136 is a PNP BJT transistor with Darlington configuration, built-in diode and resistor. It has max VCEsat of 3V, hFE of 1000, and IC of 8A. Ideal for switching applications with max power dissipation of 70W at 150 °C operating temp in a rectangular package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,743 parts In-Stock

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2,743

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Digiode

USA . 1,934 parts In-Stock

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1,934

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Anansix

USA . 462 parts In-Stock

1+ parts

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462

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 433 parts In-Stock

1+ parts

$0.314

100+ parts

-

1k+ parts

$0.282

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433

$0.314

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$0.282

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MKK Technologies

India . 178 parts In-Stock

1+ parts

$0.590

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178

$0.590

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DigiPath Technology Company

USA . 178 parts In-Stock

1+ parts

$0.590

100+ parts

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178

$0.590

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Corphita

USA . 1,654 parts In-Stock

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1,654

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Parana Technologies

USA . 861 parts In-Stock

1+ parts

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$0.375

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861

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$0.375

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Overview

Unlock the potential of your power applications with the SGS136 by STMicroelectronics. This high-quality Power BJT transistor offers a unique Darlington configuration with a built-in diode and resistor, perfect for switching operations. With a maximum VCEsat of 3V and a minimum DC current gain of 1000, this transistor delivers efficient performance and reliable operation. Whether you're designing industrial equipment or automotive systems, the SGS136 provides the value, benefits, and advantages you need to take your projects to the next level. Trust STMicroelectronics to deliver exceptional quality and innovation in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the transistor long-lasting and reliable.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, offers compatibility with other PNP components in a circuit.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design and reduces the need for additional components, saving time and effort in assembly.

Transistor Application: SWITCHING

Designed for efficient switching applications, making it ideal for use in circuits that require rapid on/off switching.

Maximum VCEsat: 3 V

Low saturation voltage minimizes power loss and heat dissipation, improving overall efficiency.

Package Shape: RECTANGULAR

Offers a compact and space-saving design, ideal for applications where size constraints are a concern.

Terminal Form: THROUGH-HOLE

Facilitates easy installation and soldering onto a circuit board, ensuring a secure connection.

Maximum Power Dissipation (Abs): 65 W

Can handle high power levels without being damaged, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting on a flange, providing stability and heat dissipation in high power applications.

Maximum Power Dissipation Ambient: 70 W

Capable of dissipating heat efficiently in ambient conditions, ensuring reliable performance under various environmental conditions.

Minimum DC Current Gain (hFE): 1000

High current gain ensures amplification of small input signals, making it suitable for signal processing applications.

Maximum Operating Temperature: 150 °C

Can operate effectively at high temperatures, suitable for industrial or automotive applications where temperature fluctuations are common.

Maximum Collector-Emitter Voltage: 80 V

Withstands high voltage levels, ensuring reliable operation in high-voltage circuits.

Transistor Element Material: SILICON

Offers excellent thermal and electrical properties, providing reliable performance in a wide range of operating conditions.

Maximum Collector Current (IC): 8 A

Can handle high currents, suitable for applications that require switching or amplification of high power signals.

Terminal Finish: TIN LEAD

Provides a reliable and durable connection, ensuring long-term performance in various operating conditions.

Terminal Position: SINGLE

Simplifies circuit layout and installation, ensuring easy integration into existing circuits.

Case Connection: ISOLATED

Prevents electrical interference and ensures proper isolation of the transistor within the circuit, improving overall performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SGS136 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

70 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

3 V

Trade Compliance

SGS136 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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