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SGS150DA020D

STMicroelectronics

SGS150DA020D by STMicroelectronics

STMicroelectronics' SGS150DA020D is a Power BJT with VCEsat of 2V, tf of 800ns, and Pdiss of 375W. Ideal for high-power applications requiring IC up to 150A, hFE of at least 75, and operating temperatures up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,596 parts In-Stock

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4,596

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Vyrian

USA . 4,049 parts In-Stock

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4,049

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Anansix

USA . 2,339 parts In-Stock

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2,339

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 228 parts In-Stock

1+ parts

$1.781

100+ parts

-

1k+ parts

$1.603

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228

$1.781

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$1.603

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MKK Technologies

India . 512 parts In-Stock

1+ parts

$3.349

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512

$3.349

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DigiPath Technology Company

USA . 512 parts In-Stock

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$3.349

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512

$3.349

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Corphita

USA . 4,929 parts In-Stock

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4,929

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Parana Technologies

USA . 697 parts In-Stock

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$2.130

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697

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$2.130

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Overview

Elevate your power management solutions with the SGS150DA020D by STMicroelectronics, a leading manufacturer known for top-quality power bipolar junction transistors. Designed for high-performance applications, this transistor offers superior reliability and efficiency, making it ideal for a wide range of industrial and automotive uses. Trust in STMicroelectronics' reputation for excellence and unlock the value and benefits that the SGS150DA020D can bring to your projects.

Feature Benefit Bullets

Maximum VCEsat: 2 V

Low VCEsat ensures minimal power loss and higher efficiency in power applications.

Maximum Fall Time (tf): 800 ns

Fast fall time allows for quick switching speeds, ideal for high-frequency applications.

Maximum Power Dissipation (Abs): 375 W

High power dissipation allows the transistor to handle large amounts of power without overheating.

Minimum DC Current Gain (hFE): 75

A high DC current gain ensures reliable amplification of signals in various circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature makes this transistor suitable for demanding industrial applications.

Maximum Collector Current (IC): 150 A

The high collector current rating enables the transistor to handle large current loads.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SGS150DA020D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

75

Maximum Fall Time (tf):

800 ns

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Power

Maximum VCEsat:

2 V

Trade Compliance

SGS150DA020D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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