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SGS116

STMicroelectronics

SGS116 by STMicroelectronics

STMicroelectronics' SGS116 is a PNP BJT transistor with Darlington configuration, ideal for switching applications. It features VCEsat of 2.5V, hFE of 500, and IC max of 2A. With a max power dissipation of 50W and operating temperature up to 150 °C, it is suitable for various electronic circuits requiring high current amplification and switching capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,231 parts In-Stock

1+ parts

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3,231

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Vyrian

USA . 3,040 parts In-Stock

1+ parts

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3,040

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Anansix

USA . 1,964 parts In-Stock

1+ parts

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1,964

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,093 parts In-Stock

1+ parts

$0.510

100+ parts

-

1k+ parts

$0.459

10k+ parts

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2,093

$0.510

-

$0.459

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MKK Technologies

India . 779 parts In-Stock

1+ parts

$0.958

100+ parts

-

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779

$0.958

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DigiPath Technology Company

USA . 779 parts In-Stock

1+ parts

$0.958

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779

$0.958

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Corphita

USA . 2,993 parts In-Stock

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2,993

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Parana Technologies

USA . 478 parts In-Stock

1+ parts

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$0.609

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478

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$0.609

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Overview

Enhance your electronic projects with the SGS116 power bipolar junction transistor by STMicroelectronics. Designed with quality and precision, this PNP darlington transistor offers reliable switching capabilities for various applications. With a maximum collector current of 2A and a minimum DC current gain of 500, this transistor provides outstanding performance and efficiency. Trust in STMicroelectronics' reputation for excellence and elevate your designs with the SGS116.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and longevity.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Integrated diode and resistor simplify circuit design and save space on the PCB.

Transistor Application: SWITCHING

Designed for efficient switching applications, making it ideal for power control circuits.

Maximum VCEsat: 2.5 V

Low saturation voltage helps in reducing power loss and increasing efficiency.

Package Shape: RECTANGULAR

Easy to handle and mount on the PCB.

Terminal Form: THROUGH-HOLE

Allows for easy and secure soldering onto the PCB.

No. of Terminals: 3

Simplifies the circuit connection and reduces complexity.

Maximum Power Dissipation (Abs): 50 W

Can handle high power levels effectively without overheating or damaging the transistor.

Package Style (Meter): FLANGE MOUNT

Provides mechanical support and easy mounting in the circuit.

Maximum Power Dissipation Ambient: 50 W

Can dissipate heat efficiently in various operating conditions.

Minimum DC Current Gain (hFE): 500

High current gain ensures stable amplification in the circuit.

Maximum Operating Temperature: 150 °C

Can operate effectively in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 80 V

Suitable for applications requiring high voltage handling capabilities.

Transistor Element Material: SILICON

Offers good performance and reliability as compared to other material options.

Maximum Collector Current (IC): 2 A

Capable of handling moderate to high current levels in the circuit.

Terminal Finish: TIN LEAD

Provides a reliable and consistent connection with the PCB.

Terminal Position: SINGLE

Simplifies the wiring and connection process in the circuit.

Case Connection: ISOLATED

Enhances safety and prevents electrical interference in the circuit.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SGS116 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

500

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

50 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

2.5 V

Trade Compliance

SGS116 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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