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M27C1001-70F1

STMicroelectronics

M27C1001-70F1 by STMicroelectronics

M27C1001-70F1 EPROM by STMicroelectronics features 128KX8 organization, 70 ns access time, and 1048576 bit memory density. It is ideal for applications requiring fast and reliable non-volatile memory storage in commercial temperature environments.

Median Price

$9.800

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

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Forefront Electronics and Design

USA . 51 parts In-Stock

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$9.800

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Vyrian

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Digiode

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Anansix

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Sternenhof Electronics

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Chip Stock

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Electronic Expediters

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ComSIT Distribution GmbH

Germany . 9 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Bristol Electronics

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Ashlea Components Ltd

UK . 7 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 7 parts In-Stock

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Infinite Electronics LLP

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Q Components

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Prism Electronics

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LittleDiode

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First Choice Components Inc.

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Distributors (Availability)

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Benley Electronics

USA . 3 parts In-Stock

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$1.750

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IDEA Electronic Components Group

UK . 2,373 parts In-Stock

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$3.030

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$2.727

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Component Stockers USA

USA . 3,029 parts In-Stock

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$3.970

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$3.770

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$3.660

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MKK Technologies

India . 917 parts In-Stock

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$5.697

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DigiPath Technology Company

USA . 917 parts In-Stock

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Microchip USA

USA . 481 parts In-Stock

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AZTECH Wire

Italy . 1,176 parts In-Stock

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Kepictronics

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Corphita

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Authorized Procurement Solutions

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Perfect Parts

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Alle Elektronik GmbH

Germany . 1,750 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,419 parts In-Stock

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Parana Technologies

USA . 307 parts In-Stock

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Overview

Unleash the power of innovation with the M27C1001-70F1 by STMicroelectronics. Crafted with precision and expertise, this EPROM offers unparalleled quality and reliability for your electronic design needs. Whether you're working on consumer electronics, automotive applications, or industrial machinery, this product delivers optimal performance, efficiency, and durability. Elevate your projects to new heights with the value, benefits, and advantages that only STMicroelectronics can provide. Choose excellence, choose M27C1001-70F1.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This durable package body material ensures the EPROM is well-protected and can withstand harsh environmental conditions.

Operating Mode: ASYNCHRONOUS

The asynchronous operation mode allows for flexible and independent control of memory access, enhancing overall system performance.

Memory Density: 1048576 bit

With a high memory density, this EPROM can store a large amount of data, making it suitable for applications that require extensive memory storage.

Maximum Access Time: 70 ns

The fast access time of 70 nanoseconds ensures quick retrieval of data, improving the efficiency of the device.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the EPROM energy-efficient and reliable.

Technical Specifications

EPROM M27C1001-70F1 attributes and parameters. Explore more EPROM devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T32

JESD-609 Code:

e3

Length:

41.885 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

245

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.72 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

M27C1001-70F1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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