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74V1T70STR

STMicroelectronics

74V1T70STR by STMicroelectronics

74V1T70STR by STMicroelectronics is a CMOS logic gate with an 8.5 ns propagation delay and operates at a nominal voltage of 5V. It features a compact low-profile package, ideal for space-constrained applications. This device supports military-grade temperature ranges from -55 °C to 125°C.

Median Price

-

Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 3,689 parts In-Stock

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Digiode

USA . 2,820 parts In-Stock

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Anansix

USA . 1,953 parts In-Stock

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Microchip USA

USA . 252 parts In-Stock

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$0.480

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252

$0.480

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Native Components

USA . 395 parts In-Stock

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$0.913

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395

$0.913

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Northwest PG Solutions

USA . 14 parts In-Stock

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$1.004

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$1.004

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AZTECH Wire

Italy . 867 parts In-Stock

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$9.560

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867

$9.560

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IDEA Electronic Components Group

UK . 750 parts In-Stock

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$18.425

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$16.582

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750

$18.425

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MKK Technologies

India . 1,952 parts In-Stock

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$34.647

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DigiPath Technology Company

USA . 1,952 parts In-Stock

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$34.647

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Component Stockers USA

USA . 641 parts In-Stock

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$99.990

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Corphita

USA . 3,354 parts In-Stock

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Parana Technologies

USA . 1,516 parts In-Stock

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$22.030

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Overview

Unlock superior performance and reliability with the 74V1T70STR from STMicroelectronics, a leader in cutting-edge technology. This high-speed CMOS logic gate ensures swift data processing with minimal delay, making it ideal for a range of applications, from consumer electronics to advanced military systems. With its compact design and exceptional thermal resilience, you gain unparalleled versatility and efficiency, empowering your projects with the quality and innovation that only STMicroelectronics can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This lightweight and durable material provides excellent protection and reliability, making it ideal for various applications.

Propagation Delay At Nominal Supply: 8.5 ns

The fast propagation delay ensures quick signal processing, which enhances the overall performance of electronic circuits.

Surface Mount: YES

Surface mount technology allows for compact design and efficient use of space on printed circuit boards, facilitating high-density layouts.

Package Shape: RECTANGULAR

The rectangular shape optimizes space usage and makes it easier to place and solder on circuit boards.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes this component compatible with a wide range of digital circuits.

Load Capacitance (CL): 50 pF

A load capacitance of 50 pF provides good performance characteristics for various applications without significant signal distortion.

Power Supplies (V): 5

Designing with a single power supply of 5V simplifies circuit design and reduces overall power consumption.

No. of Terminals: 5

Five terminals provide flexibility in circuit connections, allowing for multiple input/output configurations.

Package Style (Meter): SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

The low-profile design enables mounting in tight spaces while ensuring high-performance operation.

Maximum I (ol): 8 Amp

A maximum output current of 8A allows this logic gate to drive substantial loads, making it suitable for high-current applications.

Propagation Delay (tpd): 8.5 ns

The consistent propagation delay of 8.5 ns ensures reliability in high-speed applications, making it a robust choice.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this component is suitable for use in demanding environments.

Minimum Operating Temperature: -55 °C

A wide temperature range allows this logic gate to function in extreme conditions, ensuring versatility in applications.

Terminal Finish: NICKEL PALLADIUM GOLD

This premium finish enhances corrosion resistance and solderability, ensuring long-term reliability of connections.

Terminal Position: DUAL

Dual terminal positioning improves the layout possibilities on PCBs, making integration easier.

Maximum Seated Height: 1.45 mm

The low seated height is beneficial for low-profile designs, enhancing overall product form factor.

Width: 1.625 mm

This compact width allows for efficient use of space on PCBs, making it suitable for modern electronics.

Minimum Supply Voltage (Vsup): 4.5 V

The minimum supply voltage requirement of 4.5V allows operation in a variety of conditions, enhancing compatibility.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum reflow time of 30 seconds ensures high process reliability during manufacturing.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance allows this component to withstand rigorous manufacturing processes.

Length: 2.9 mm

The short length contributes to space efficiency on PCBs, allowing for more compact designs.

Temperature Grade: MILITARY

Military-grade temperatures assure high reliability and performance in harsh environments, ideal for critical applications.

Technology: CMOS

CMOS technology offers low power consumption and high speed, making this logic gate energy-efficient and effective.

Terminal Form: GULL WING

The gull wing terminal form enhances soldering performance and reliability in surface mount applications.

Packing Method: TR

Through-hole packing methods facilitate easier handling and automated assembly, increasing manufacturing efficiency.

Terminal Pitch: 0.95 mm

A narrow terminal pitch provides flexibility in design while maintaining appropriate spacing for reliable connections.

Maximum Supply Voltage (Vsup): 5.5 V

The capability to handle up to 5.5V supply voltage expands application possibilities in diverse circuit designs.

Technical Specifications

Logic Gates 74V1T70STR attributes and parameters. Explore more Logic Gates devices from STMicroelectronics

Specs

Family:

74V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Propagation Delay At Nominal Supply:

8.5 ns

Propagation Delay (tpd):

8.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.625 mm

Trade Compliance

74V1T70STR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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