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74V1G04C

STMicroelectronics

74V1G04C by STMicroelectronics

74V1G04C by STMicroelectronics is a CMOS logic gate with a propagation delay of 11.5 ns at 3.3V, suitable for military-grade applications. It has a max operating temperature of 125 °C, operates within a supply voltage range of 2-5.5V, and features a small outline package with dual terminals for surface mount assembly.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

USA . 3,982 parts In-Stock

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Anansix

USA . 449 parts In-Stock

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449

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Digiode

USA . 139 parts In-Stock

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139

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IDEA Electronic Components Group

UK . 1,069 parts In-Stock

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$12.078

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$10.870

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MKK Technologies

India . 1,841 parts In-Stock

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$22.711

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DigiPath Technology Company

USA . 1,841 parts In-Stock

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$22.711

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Parana Technologies

USA . 1,480 parts In-Stock

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$14.441

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$14.441

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Native Components

USA . 902 parts In-Stock

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Corphita

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Northwest PG Solutions

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Overview

Unlock the power of seamless logic operation with the 74V1G04C by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics offers top-notch quality and reliability. Ideal for a wide range of applications, this logic gate provides fast propagation delay and low power consumption. Experience the value of enhanced performance and efficiency with the 74V1G04C, making it the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body makes the product lightweight and durable, allowing for easy handling and transport.

Propagation Delay At Nominal Supply: 12 ns

With a low propagation delay at nominal supply voltage, this logic gate operates efficiently and quickly in processing signals.

Surface Mount: YES

Being surface mountable, this logic gate can be easily integrated onto circuit boards, saving space and simplifying the assembly process.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V nominal supply voltage ensures compatibility with a wide range of electronic systems, making it versatile for various applications.

Load Capacitance (CL): 50 pF

The low load capacitance of 50 pF allows for efficient signal transmission and reception, ensuring minimal signal distortion.

Power Supplies (V): 2/5.5

With a wide range of power supply voltages supported (2V to 5.5V), this logic gate can be used in diverse electronic circuits and systems.

No. of Terminals: 5

The 5 terminals offer flexibility in connecting the logic gate to other components, enabling custom configurations for specific circuit designs.

Maximum I (ol): 4 Amp

The high maximum output current of 4 Amps allows for driving larger loads, making this logic gate suitable for power-intensive applications.

Propagation Delay (tpd): 11.5 ns

The low propagation delay of 11.5 ns ensures fast signal processing and response times, crucial for real-time applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this logic gate can withstand harsh environmental conditions and extended use.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55 °C ensures reliable performance even in extreme cold conditions, making it suitable for a wide range of environments.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and conductivity, ensuring secure connections and reliable performance.

Terminal Position: DUAL

The dual terminal position allows for easy placement and soldering on circuit boards, enhancing the overall assembly process.

Maximum Seated Height: 1.1 mm

The low maximum seated height of 1.1 mm minimizes the overall profile of the logic gate, making it suitable for compact electronic devices and modules.

Width: 1.25 mm

The narrow width of 1.25 mm enables efficient space utilization on circuit boards, ideal for high-density electronic applications.

Minimum Supply Voltage (Vsup): 2 V

The low minimum supply voltage of 2V allows for compatibility with low-power electronic systems, making it energy-efficient and versatile.

Length: 2 mm

The compact length of 2 mm helps in achieving a small form factor for electronic devices, making it ideal for applications with space constraints.

Temperature Grade: MILITARY

The military-grade temperature rating ensures reliable operation in rugged environments and high-temperature conditions, making it suitable for defense and aerospace applications.

Technology: CMOS

The CMOS technology used in the logic gate offers low power consumption, high noise immunity, and fast switching speeds, making it energy-efficient and reliable.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and mounting on circuit boards, ensuring secure connections and robust mechanical stability.

Terminal Pitch: 0.65 mm

The small terminal pitch of 0.65 mm enables high-density mounting on PCBs, allowing for compact and efficient circuit designs.

Maximum Supply Voltage (Vsup): 5.5 V

The high maximum supply voltage of 5.5V provides compatibility with a wide range of power sources, ensuring versatility and reliability in various applications.

Technical Specifications

Logic Gates 74V1G04C attributes and parameters. Explore more Logic Gates devices from STMicroelectronics

Specs

Family:

74V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Power Supplies (V):

2/5.5

Propagation Delay At Nominal Supply:

12 ns

Propagation Delay (tpd):

11.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

1.25 mm

Trade Compliance

74V1G04C Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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