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74V1G04STR

STMicroelectronics

74V1G04STR by STMicroelectronics

74V1G04STR by STMicroelectronics is a CMOS logic gate with 11.5 ns propagation delay at 3.3V, suitable for military-grade applications. It features a small outline package with dual terminals and can operate in temperatures ranging from -55 to 125 °C. The device has a max supply voltage of 5.5V and load capacitance of 50 pF, making it ideal for high-speed signal processing tasks.

Median Price

$2.210

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

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Forefront Electronics and Design

USA . 4 parts In-Stock

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ComSIT Distribution GmbH

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Vyrian

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Corel Iberica Componentes, S.L.

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Digiode

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ACDS - Activité Composants Distribution Service

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Anansix

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Sogenti Electronics

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EMSNET

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Semtec, LLC

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Elcom Components

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PC Components Company LLC

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Bristol Electronics

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J2 Sourcing AB

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Distributors (Availability)

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Microchip USA

USA . 471 parts In-Stock

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$0.878

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AZTECH Wire

Italy . 691 parts In-Stock

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$10.540

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IDEA Electronic Components Group

UK . 779 parts In-Stock

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MKK Technologies

India . 2,095 parts In-Stock

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DigiPath Technology Company

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Futuretech Components

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USA . 2,373 parts In-Stock

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Overview

Looking for a reliable logic gate to enhance your electronic designs? Look no further than the 74V1G04STR by STMicroelectronics! With a manufacturer known for top-quality components, this small outline and low profile package offers fast propagation delays and a wide operating temperature range. Perfect for military-grade applications, this logic gate is ideal for a variety of projects. Trust in STMicroelectronics for superior performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good durability and reliability for the product, ensuring longevity and protection from external elements.

Propagation Delay At Nominal Supply: 11.5 ns

The low propagation delay ensures quick response times in processing signals, making this product efficient for fast-paced applications.

Surface Mount: YES

The surface mount feature allows for easy installation and integration into circuit boards, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V is commonly used in many electronic systems, making this product compatible with a wide range of applications.

Load Capacitance (CL): 50 pF

With a specific load capacitance, this product can effectively manage and control the flow of electrical signals, ensuring stable performance.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature tolerance allows this product to function reliably even in extreme environmental conditions, increasing its versatility.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature capability ensures this product can operate in a wide range of temperature conditions, making it suitable for various environments.

Technology: CMOS

The CMOS technology used in this product offers low power consumption and high noise immunity, making it energy-efficient and reliable for long-term use.

Technical Specifications

Logic Gates 74V1G04STR attributes and parameters. Explore more Logic Gates devices from STMicroelectronics

Specs

Family:

74V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5.5

Propagation Delay At Nominal Supply:

11.5 ns

Propagation Delay (tpd):

11.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.625 mm

Trade Compliance

74V1G04STR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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