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BB502MBS-TL-E

Renesas Electronics

BB502MBS-TL-E by Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Time At Peak Reflow Temperature (s): 20; Maximum Feedback Capacitance (Crss): .05 pF;

Median Price

$0.164

Lifecycle Status

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Rochester

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$0.170

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$0.141

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$0.126

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Verical

USA . 270,000 parts In-Stock

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$0.157

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273,000

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2,000

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Northwest PG Solutions

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252

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Microchip USA

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199

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Technical Specifications

RF Small Signal Field Effect Transistors (FET) BB502MBS-TL-E attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Additional Features:

LOW NOISE

Minimum DS Breakdown Voltage:

6 V

Maximum Drain Current (Abs) (ID):

.02 A

Maximum Drain Current (ID):

.02 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.05 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

17 dB

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

20

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BB502MBS-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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