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BB503CCS-TL-E

Renesas Electronics

BB503CCS-TL-E by Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G4;

Median Price

$0.209

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3

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1k+

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Rochester

USA . 54,000 parts In-Stock

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$0.217

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$0.180

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$0.160

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$0.217

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Verical

USA . 54,000 parts In-Stock

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$0.201

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$0.201

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DigiKey Marketplace

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A-Z Elektronik GmbH

Germany . 6,089 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,059 parts In-Stock

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Kepictronics

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S.R.D Solutions

India . 3,000 parts In-Stock

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Native Components

USA . 724 parts In-Stock

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Northwest PG Solutions

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Technical Specifications

RF Small Signal Field Effect Transistors (FET) BB503CCS-TL-E attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Additional Features:

LOW NOISE

Minimum DS Breakdown Voltage:

6 V

Maximum Drain Current (ID):

.02 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.05 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Minimum Power Gain (Gp):

17 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BB503CCS-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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