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NTNS41006PZTCG

Onsemi

NTNS41006PZTCG by Onsemi

NTNS41006PZTCG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and RESISTOR, METAL-OXIDE SEMICONDUCTOR technology, and operates in ENHANCEMENT MODE. Package style is CHIP CARRIER, suitable for surface mount with -55 to 150 °C operating temperature range.

Median Price

$0.119

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 264,000 parts In-Stock

1+ parts

-

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$0.119

1k+ parts

$0.099

10k+ parts

$0.088

264,000

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$0.119

$0.099

$0.088

DigiKey

USA . 264,000 parts In-Stock

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$0.150

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$0.150

Verical

USA . 264,000 parts In-Stock

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$0.110

264,000

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$0.110

Distributors (In-Stock)

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Digiode

USA . 190 parts In-Stock

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$0.093

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$0.093

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Vyrian

USA . 1,915 parts In-Stock

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$0.098

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DigiKey Marketplace

USA . 264,000 parts In-Stock

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$0.100

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264,000

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Distributors (Availability)

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Corphita

USA . 1,348 parts In-Stock

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$0.088

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$0.088

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Corohmni

South Africa . 266 parts In-Stock

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$0.098

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266

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Continental Prestige Electronics

USA . 264,000 parts In-Stock

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$0.117

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264,000

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$0.117

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SupplyDigital Components

Austria . 7,837 parts In-Stock

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TANS Electronics

Latvia . 6,318 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,709 parts In-Stock

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Kulean Microsystems

USA . 3,872 parts In-Stock

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UHIMA Technologies

Türkiye . 564 parts In-Stock

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Problanco Electronics

Mexico . 551 parts In-Stock

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Overview

Enhance your electronic projects with the NTNS41006PZTCG by Onsemi. Crafted with precision and quality, this P-Channel Small Signal Field Effect Transistor offers reliability and performance like no other. Ideal for switching applications, this transistor boasts a single configuration with a built-in diode and resistor, making it a versatile choice for a variety of projects. With a wide operating temperature range and high power dissipation capability, this transistor ensures durability and efficiency. Trust in Onsemi's expertise in semiconductor technology and elevate your designs with the NTNS41006PZTCG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel FETs typically have lower resistance and higher current-carrying capacity, making them efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and save space on the PCB.

Transistor Application: SWITCHING

This FET is optimized for switching operations, offering fast response times and efficient performance.

Surface Mount: YES

Surface mounting allows for easy and convenient assembly on circuit boards, saving time and effort during manufacturing.

Minimum DS Breakdown Voltage: 30 V

The high breakdown voltage ensures reliable operation and protection against voltage spikes.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for use in a wide range of environments without risk of overheating.

Maximum Drain Current (ID): 0.137 A

The high drain current rating indicates the transistor's ability to handle significant current loads without overheating or failing.

Maximum Drain-Source On Resistance: 4 ohm

The low on-resistance results in minimal power loss and efficient operation in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTNS41006PZTCG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.137 A

Maximum Drain-Source On Resistance:

4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PBCC-N3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTNS41006PZTCG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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