Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Featured manufacturers
NTNS3C68NZT5G by Onsemi is a N-CHANNEL FET with 12V DS Breakdown Voltage, 0.758A ID, and 0.16 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150 °C. Package style is CHIP CARRIER with PLASTIC/EPOXY body material and NO LEAD terminals.
Median Price
$0.119
Lifecycle Status
Suppliers In-Stock
6
In-Stock Inventory
1k+
Rochester
1+ parts
-
100+ parts
1k+ parts
$0.099
10k+ parts
$0.088
DigiKey
$0.150
Verical
$0.110
Vyrian
$0.079
Digiode
$0.092
DigiKey Marketplace
$0.100
Corohmni
Corphita
$0.087
Continental Prestige Electronics
$0.117
SupplyDigital Components
TANS Electronics
Problanco Electronics
Kulean Microsystems
UHIMA Technologies
Provides durability and protection for the transistor, making it suitable for various applications and environments.
Offers efficient switching capabilities and low on-resistance for improved performance.
Simplifies circuit design and saves space by integrating additional components into the transistor.
Specifically designed for switching applications, ensuring reliable performance in such scenarios.
Enables easy and convenient installation on PCBs, saving time and effort during assembly.
Ensures safe operation within specified voltage limits, protecting the transistor from potential damage.
Can withstand high temperature environments, enhancing the overall reliability of the product.
Supports high current flow, making it suitable for applications requiring robust power handling capabilities.
Provides low on-resistance for efficient power management and reduced heat generation.
Facilitates easy mounting and connection on PCBs, enhancing the usability of the transistor.
Small Signal Field Effect Transistors (FET) NTNS3C68NZT5G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi
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NTNS3C68NZT5G Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
M24308/2-1F
Cristek Interconnects
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; No. of Rows Loaded: 2; Shell Size: 1/E; Filter Feature: NO;
1N4148WS
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Bourns
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317BD2TG
Onsemi
LM317BD2TG by Onsemi is an adjustable positive single output standard regulator with a max output current of 1.5A and a max load regulation of 5.8%. Operating temperature ranges from -40 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact designs.
SS14
Surge Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
USB3320C-EZK-TR
Standard Microsystems
INTERFACE CIRCUIT; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 32; Package Code: HVQCCN; Package Shape: SQUARE;
RC0603JR-070RL
Yageo
Yageo's RC0603JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. Its metal glaze/thick film technology and 0.1 W power dissipation make it ideal for jumper applications in various electronic devices.
KSZ9031RNXIA
Micrel
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 48; Package Code: HVQCCN; Package Shape: SQUARE;
CR0805-FX-10R0ELF
Bourns CR0805-FX-10R0ELF is a SMT fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for applications requiring a temperature range of -55 to 155 °C, such as automotive electronics and industrial control systems.
Bytesonic Electronics
LM358N
Texas Instruments
LM358N by Texas Instruments is an operational amplifier with 2 functions, offering a max input offset voltage of 9000 uV and a nominal common mode reject ratio of 85 dB. Widely used in commercial applications, it operates at temperatures ranging from 0 to 70 °C and has a unity gain bandwidth of 1000 kHz.
BAV99
Won-top Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Aeroflex/metelics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Package Shape: ROUND; Transistor Application: SWITCHING;
FDN306P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 2.6 A; Operating Mode: ENHANCEMENT MODE;
BSS138
Weitron Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; Terminal Position: DUAL;
LP2950CDT-3.3G
LP2950CDT-3.3G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 0.1A. It has a small outline package style, operates at temperatures ranging from -40 to 125 °C, and is suitable for applications requiring low dropout voltage and precise voltage regulation in electronic circuits.
EU2B-YS2J03F
Idec
ROTARY SWITCH;
Lite-on Technology
RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel; Maximum Output Current: .1 A; Maximum Reverse Recovery Time: .006 us;
1N4148
Semitron
RECTIFIER DIODE; Surface Mount: NO; JESD-609 Code: e0; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Maximum Reverse Recovery Time: .004 us;
2N7000G
2N7000G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A Drain Current. Widely used in enhancement mode, it has a max power dissipation of 0.35W. Ideal for applications requiring small signal amplification and switching functions.
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Maximum Drain Current (ID): .2 A; Operating Mode: ENHANCEMENT MODE;
2N7002DW
Onsemi's 2N7002DW is a N-CHANNEL FET with 60V DS breakdown voltage, 0.115A max drain current, and 7.5 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a peak reflow temp of 260C and -55 to 150C operating range.
FDG8850NZ
FDG8850NZ by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It features a max drain current of 0.75A, on-resistance of 0.4 ohm, and breakdown voltage of 30V. With a small outline package style and operating temp up to 150°C, it's suitable for various electronic devices.
FDG6332C_F085
FDG6332C_F085 by Fairchild Semiconductor is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It's used for switching applications in enhancement mode, with max drain current of 0.7A and on-resistance of 0.3Ω. The package is SOT-23 style, surface mountable, operating up to 150°C.
2N7000
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JEDEC-95 Code: TO-92; Terminal Form: THROUGH-HOLE;
2N7002T
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 5 pF; JESD-30 Code: R-PDSO-G3; Package Body Material: PLASTIC/EPOXY;
BSS84
National Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Operating Mode: ENHANCEMENT MODE; Moisture Sensitivity Level (MSL): 1;
BSS138WG
BSS138WG by Changzhou Galaxy Century Microelectronics is a N-CHANNEL FET with 50V DS breakdown voltage, ideal for SWITCHING applications. It features SINGLE configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. With 0.2W power dissipation and -55 to 150 °C operating temperature range, it offers reliable performance in various electronic circuits.
FDC640P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
2N7002ET1G
2N7002ET1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 0.26A max drain current. Ideal for switching applications, it operates in enhancement mode with 2.5 ohm RDS(on) and can handle up to 0.3W power dissipation.
2N7002BK,215
NXP Semiconductors' 2N7002BK,215 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.35A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 1.6 ohm RDS(on) and -55 to 150 °C temp range.
ZVP3310FTA
Diodes Incorporated
ZVP3310FTA by Diodes Inc. is a P-CHANNEL FET for SWITCHING applications. It has a 100V DS Breakdown Voltage, 0.33W Power Dissipation, and 20 ohm On Resistance. With ENHANCEMENT MODE operation, it can handle up to 0.075A Drain Current in a SMALL OUTLINE package.
MMBF170LT1
MMBF170LT1 by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.5A max drain current, and 5 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. This small outline transistor has a peak reflow temp of 235°C and can withstand temperatures from -55 to 150°C.
NX3008PBK,215
NX3008PBK,215 by NXP Semiconductors is a P-CHANNEL FET with max drain current of 0.23A and power dissipation of 0.42W. Ideal for applications requiring surface mount technology, it operates at up to 150°C making it suitable for various electronic devices.
Yangzhou Yangjie Electronics
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 60 V;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; JESD-30 Code: O-PBCY-T3; Maximum Operating Temperature: 150 Cel;
NUD3124DMT1G
NUD3124DMT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. Operating in enhancement mode, it has a max ID of 0.15A and RDS(on) of 1.4 ohm. Ideal for switching applications due to its small outline package style and temp rating of 150°C.
SI4909DY-T1-GE3
Vishay Intertechnology
SI4909DY-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 8A Drain Current, and 0.027ohm On Resistance. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 150°C.
FDC638P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Drain-Source On Resistance: .048 ohm; Terminal Position: DUAL;
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NTNS3A65PZT5G
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .218 W; Maximum Drain Current (Abs) (ID): .281 A; Moisture Sensitivity Level (MSL): 1;
NTNS0K8N021ZTCG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PDSO-N3;
NTNS3A91PZT5G
NTNS3A91PZT5G by Onsemi is a P-CHANNEL FET with max drain current of 0.223A and power dissipation of 0.121W. Ideal for applications requiring small signal amplification in surface mount configurations at temperatures up to 150°C.
NTNS4C69NTCG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .178 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
NTNS41S006PZTCG
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .121 W; Transistor Application: SWITCHING; Case Connection: DRAIN;
NTNS3193NZT5G
NTNS3193NZT5G by Onsemi is a N-CHANNEL FET with 0.224A max drain current and 0.139W max power dissipation. Ideal for applications requiring high temperature resistance up to 150°C, such as automotive electronics and industrial control systems.
NTNS1K5N021ZTCG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Maximum Drain-Source On Resistance: 1.8 ohm; Maximum Operating Temperature: 150 Cel;
NTNS31315NZTCG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Transistor Application: SWITCHING; Package Shape: RECTANGULAR;
NTNS5K0P021ZTCG
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY;
NTNS31350PZTCG
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Terminal Finish: NICKEL PALLADIUM GOLD; No. of Elements: 1;
NTNS3C94NZT5G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .12 W; Terminal Finish: NICKEL PALLADIUM GOLD; Maximum Drain Current (ID): .384 A;
NTNS41S006PZT5G
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
NTNS3190NZT5G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Peak Reflow Temperature (C): 260; Terminal Form: NO LEAD; Transistor Application: SWITCHING;
NTNS4C69NT5G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: DRAIN; Maximum Drain-Source On Resistance: .16 ohm;
NTNS2K1P021ZTCG
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (ID): .127 A;
NTNS41006PZT5G
Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
NTNS260P02P8ZTCG
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .178 W; Transistor Application: SWITCHING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NTNS3164NZT5G
NTNS3164NZT5G by Onsemi is a N-CHANNEL FET with max drain current of 0.361A and power dissipation of 0.217W. Ideal for applications requiring high temperature resistance up to 150°C, such as in automotive electronics or industrial control systems.
NTNS41006PZTCG
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .121 W; Peak Reflow Temperature (C): 260; Minimum DS Breakdown Voltage: 30 V;
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