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NTNS3C68NZT5G

Onsemi

NTNS3C68NZT5G by Onsemi

NTNS3C68NZT5G by Onsemi is a N-CHANNEL FET with 12V DS Breakdown Voltage, 0.758A ID, and 0.16 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150 °C. Package style is CHIP CARRIER with PLASTIC/EPOXY body material and NO LEAD terminals.

Median Price

$0.119

Lifecycle Status

EOL

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 269,117 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

269,117

-

$0.119

$0.099

$0.088

DigiKey

USA . 269,117 parts In-Stock

1+ parts

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$0.150

269,117

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$0.150

Verical

USA . 189,117 parts In-Stock

1+ parts

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$0.110

189,117

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$0.110

Distributors (In-Stock)

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Vyrian

USA . 2,432 parts In-Stock

1+ parts

$0.079

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2,432

$0.079

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Digiode

USA . 2,477 parts In-Stock

1+ parts

$0.092

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2,477

$0.092

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DigiKey Marketplace

USA . 269,117 parts In-Stock

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$0.100

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269,117

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$0.100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 367 parts In-Stock

1+ parts

$0.079

100+ parts

-

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367

$0.079

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Corphita

USA . 1,555 parts In-Stock

1+ parts

$0.087

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1,555

$0.087

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Continental Prestige Electronics

USA . 269,117 parts In-Stock

1+ parts

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$0.117

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269,117

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$0.117

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SupplyDigital Components

Austria . 7,300 parts In-Stock

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7,300

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TANS Electronics

Latvia . 4,759 parts In-Stock

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4,759

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Problanco Electronics

Mexico . 4,409 parts In-Stock

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4,409

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Kulean Microsystems

USA . 2,548 parts In-Stock

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2,548

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UHIMA Technologies

Türkiye . 553 parts In-Stock

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553

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Overview

Enhance your electronic devices with the NTNS3C68NZT5G by Onsemi, a high-quality Small Signal Field Effect Transistor designed for switching applications. With a single configuration featuring a built-in diode and resistor, this N-channel transistor offers reliability and efficiency in a compact chip carrier package. Whether you're designing power supplies, amplifiers, or motor control systems, this transistor provides exceptional performance with its low on-resistance and high drain current capabilities. Trust Onsemi's expertise and elevate your designs with the NTNS3C68NZT5G today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: N-CHANNEL

Offers efficient switching capabilities and low on-resistance for improved performance.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design and saves space by integrating additional components into the transistor.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Enables easy and convenient installation on PCBs, saving time and effort during assembly.

Minimum DS Breakdown Voltage: 12 V

Ensures safe operation within specified voltage limits, protecting the transistor from potential damage.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, enhancing the overall reliability of the product.

Maximum Drain Current (ID): 0.758 A

Supports high current flow, making it suitable for applications requiring robust power handling capabilities.

Maximum Drain-Source On Resistance: 0.16 ohm

Provides low on-resistance for efficient power management and reduced heat generation.

Terminal Position: BOTTOM

Facilitates easy mounting and connection on PCBs, enhancing the usability of the transistor.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTNS3C68NZT5G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

12 V

Maximum Drain Current (ID):

.758 A

Maximum Drain-Source On Resistance:

.16 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PBCC-N3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

NICKEL GOLD PALLADIUM

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTNS3C68NZT5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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