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NTGS3136PT1G

Onsemi

NTGS3136PT1G by Onsemi

NTGS3136PT1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 5.8A ID, and 0.033 ohm RDS(on). Ideal for SWITCHING applications in small outline packages, operating from -55 to 150°C with GULL WING terminals.

Median Price

$0.514

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 8,664 parts In-Stock

1+ parts

$0.529

100+ parts

$0.280

1k+ parts

$0.224

10k+ parts

$0.190

8,664

$0.529

$0.280

$0.224

$0.190

Mouser Electronics

USA . 3,882 parts In-Stock

1+ parts

$0.920

100+ parts

$0.553

1k+ parts

$0.393

10k+ parts

$0.304

3,882

$0.920

$0.553

$0.393

$0.304

DigiKey

USA . 1,061 parts In-Stock

1+ parts

$0.920

100+ parts

$0.553

1k+ parts

$0.393

10k+ parts

$0.307

1,061

$0.920

$0.553

$0.393

$0.307

Verical

USA . 12,000 parts In-Stock

1+ parts

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$0.350

10k+ parts

$0.300

12,000

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$0.350

$0.300

Chip1Stop

Japan . 530 parts In-Stock

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-

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$0.498

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$0.415

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530

-

$0.498

$0.415

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Rochester

USA . 432 parts In-Stock

1+ parts

-

100+ parts

$0.413

1k+ parts

$0.343

10k+ parts

$0.306

432

-

$0.413

$0.343

$0.306

Distributors (In-Stock)

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Digiode

USA . 387 parts In-Stock

1+ parts

$0.321

100+ parts

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387

$0.321

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Vyrian

USA . 1,640 parts In-Stock

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$0.338

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$0.338

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Chip Stock

USA . 4,300 parts In-Stock

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4,300

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Sea View Technologies

USA . 3,765 parts In-Stock

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3,765

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Pegasus Components GmbH

Germany . 3,000 parts In-Stock

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3,000

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ACDS - Activité Composants Distribution Service

France . 1,881 parts In-Stock

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1,881

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Bristol Electronics

USA . 1,881 parts In-Stock

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Nova Conductors

Japan . 66 parts In-Stock

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66

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,520 parts In-Stock

1+ parts

$0.287

100+ parts

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2,520

$0.287

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Corphita

USA . 750 parts In-Stock

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$0.304

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750

$0.304

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Corohmni

South Africa . 232 parts In-Stock

1+ parts

$0.338

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232

$0.338

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Benley Electronics

USA . 1 parts In-Stock

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$1.000

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1

$1.000

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Metaverse IC Inc.

Canada . 38,230 parts In-Stock

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S.R.D Solutions

India . 20,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,663 parts In-Stock

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Problanco Electronics

Mexico . 5,624 parts In-Stock

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SupplyDigital Components

Austria . 4,619 parts In-Stock

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Continental Prestige Electronics

USA . 3,660 parts In-Stock

1+ parts

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$0.540

1k+ parts

$0.334

10k+ parts

$0.321

3,660

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$0.540

$0.334

$0.321

A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

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Kulean Microsystems

USA . 2,254 parts In-Stock

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TANS Electronics

Latvia . 1,466 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 917 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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Authorized Procurement Solutions

USA . 17 parts In-Stock

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Overview

Unlock the power of innovation with the NTGS3136PT1G by Onsemi. This small signal field effect transistor offers unparalleled quality and reliability, backed by the trusted manufacturer Onsemi. Ideal for switching applications, this P-channel transistor is designed for enhancement mode operation, delivering a maximum drain current of 5.8A. With a minimum DS breakdown voltage of 20V and a maximum power dissipation of 1.6W, the NTGS3136PT1G provides efficient performance in a compact package. Experience the value and benefits of this high-performance FET, perfect for a wide range of electronic applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where P-channel transistors are needed.

Configuration: SINGLE WITH BUILT-IN DIODE

Includes a built-in diode for added functionality and convenience.

Transistor Application: SWITCHING

Ideal for switching applications, offering reliable performance.

Surface Mount: YES

Can be easily mounted on a PCB, saving space and facilitating automated assembly.

Minimum DS Breakdown Voltage: 20 V

Provides a high breakdown voltage for added protection against voltage spikes.

Package Shape: RECTANGULAR

Rectangular shape is commonly used and facilitates easy placement on a PCB.

Terminal Form: GULL WING

Gull wing terminals are great for surface mounting and provide secure connections.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for easy control of the transistor's conductivity.

Maximum Drain Current (Abs) (ID): 5.1 A

Capable of handling high drain currents for demanding applications.

No. of Terminals: 6

Provides multiple connection points for versatile circuit designs.

Maximum Power Dissipation (Abs): 1.6 W

Can dissipate heat effectively, ensuring stable operation under various conditions.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and is suitable for compact designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Uses MOSFET technology for efficient and reliable performance.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance.

Transistor Element Material: SILICON

Silicon material provides good electrical properties for the transistor.

Minimum Operating Temperature: -55 °C

Can operate in low-temperature environments without issues.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and durability for the terminals.

Maximum Drain Current (ID): 5.8 A

Higher maximum drain current rating for increased capability.

Maximum Drain-Source On Resistance: 0.033 ohm

Low on-resistance for efficient conduction and minimal power loss.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting options.

Maximum Time At Peak Reflow Temperature (s): 40

Can withstand peak reflow temperatures for proper soldering during assembly.

Peak Reflow Temperature °C: 260

Suitable for reflow soldering processes common in PCB assembly.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTGS3136PT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

5.1 A

Maximum Drain Current (ID):

5.8 A

Maximum Drain-Source On Resistance:

.033 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTGS3136PT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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