Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTGS4141NT1G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage and 5A max drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a low on-resistance of 0.025 ohm.
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Plastic and epoxy materials offer good durability and thermal properties, ensuring a long lifespan for the transistor.
N-channel transistors typically have higher electron mobility and lower on-resistance, making them efficient for switching applications.
The built-in diode provides additional protection against reverse current flow, enhancing the reliability of the transistor.
Specifically designed for switching applications, this transistor offers fast response times and efficient performance in on/off operations.
Enhancement mode transistors require a positive voltage to turn on, providing better control over the switching process.
With a high maximum drain current rating, this transistor can handle heavy loads and high-power applications with ease.
The low power dissipation of this transistor reduces the risk of overheating, ensuring stable operation even under high loads.
Metal-oxide semiconductor technology offers high efficiency and reliability, making this transistor suitable for demanding applications.
With a high maximum operating temperature, this transistor can withstand elevated heat levels without compromising performance.
The low on-resistance of the transistor minimizes power loss and improves efficiency in switching applications.
Small Signal Field Effect Transistors (FET) NTGS4141NT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
NTGS4141NT1G Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Packaging - Covering Tape/Material Chg 20/May/2016
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
2N2222A
Philips Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
OPA2277UA
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
1N4148
Renesas Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
NDT2955
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (Abs) (ID): 2.5 A;
M24308/2-1F
Adi Electronics
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; MIL Conformity: YES; Filter Feature: NO; Mating Info.: MULTIPLE MATING PARTS AVAILABLE;
Silicon Transistor
BAV99
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
CGA3E2X7R1H104K080AA
TDK
CGA3E2X7R1H104K080AA by TDK is a fixed ceramic capacitor with a capacitance of 0.1 uF and a rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate at temperatures ranging from -55 to 125 °C. This capacitor is commonly used in surface mount applications for various electronic devices.
Minilogic Device
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .001 A;
SMBJ18CA
Concord Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V;
FDD5614P
Onsemi
FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.
Cobham Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100; Maximum Turn Off Time (toff): 300 ns;
STM32H753ZIT6
STMicroelectronics
STM32H753ZIT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, offering 20-Ch 16-Bit ADC and 2-Ch 12-Bit DAC channels. With a clock frequency of up to 48 MHz, it is ideal for industrial applications requiring CAN, Ethernet, and USB connectivity. This microcontroller operates b/w -40°C to +85°C temperature range.
BAV99LT1G
BAV99LT1G by Onsemi is a series connected diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.006 us and can handle up to 100V repetitive peak reverse voltage. Ideal for rectification applications, this diode operates b/w -65°C to 150°C temperature range.
International Semiconductor
BSS138
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;
Vishay Sprague
NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JEDEC-95 Code: TO-18; Maximum Collector-Emitter Voltage: 40 V;
ABS25-32.768KHZ-1-T
Abracon
Abracon's ABS25-32.768KHZ-1-T crystal oscillator offers 10 ppm frequency tolerance, 126% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal operating frequency, such as IoT devices and precision timing systems.
Forward International Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;
Rfe International
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Forward Voltage (VF): 1 V; Config: SINGLE;
2N7002CK,215
NXP Semiconductors
NXP Semiconductors' 2N7002CK,215 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.3A drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 0.35W.
BSS138BKW,115
NXP Semiconductors' BSS138BKW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for SWITCHING applications, it features a built-in diode, 1.6 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it meets AEC-Q101 standards.
IRLML9303TRPBF
Infineon Technologies
Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
2N7002T
Tak Cheong Electronics Holdings
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BC548B
Tt Electronics Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
2N7002W
Weitron Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
BSS84AKM,315
Nexperia
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): CHIP CARRIER; Moisture Sensitivity Level (MSL): 1; Package Shape: RECTANGULAR;
2N7002
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING;
NDS351AN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; JESD-609 Code: e3; JESD-30 Code: R-PDSO-G3;
BSS84
Changzhou Galaxy Century Microelectronics
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 50 V; Maximum Drain-Source On Resistance: 10 ohm;
SI2333DDS-T1-GE3
Vishay Intertechnology
SI2333DDS-T1-GE3 by Vishay Intertechnology is a P-channel FET with 12V breakdown voltage and 6A drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.7W. The transistor features a small outline package style and can withstand temperatures from -55 to 150°C.
FDN360P_NL
Fairchild Semiconductor's FDN360P_NL is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2A, 0.08 ohm RDS(on), and operates in ENHANCEMENT MODE. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals and can handle up to 150°C operating temperature.
NDS0605
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;
2N7000
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; Terminal Finish: Matte Tin (Sn);
DMN3067LW-7
Diodes Incorporated
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: MATTE TIN;
DMP6023LFG-7
DMP6023LFG-7 by Diodes Inc. is a P-CHANNEL FET with 60V DS breakdown voltage, 7.7A max drain current, and 0.025 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and ENHANCEMENT MODE operation.
NVR5124PLT1G
NVR5124PLT1G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 0.47W Power Dissipation, and 1.1A Drain Current. Ideal for applications requiring high temperature tolerance up to 150°C, such as automotive electronics due to AEC-Q101 standard compliance.
IRF6216TRPBF
Infineon's IRF6216TRPBF is a P-CHANNEL FET for SWITCHING applications. Features include 150V DS Breakdown Voltage, 2.2A ID, and 0.24 ohm RDS(on). With ENHANCEMENT MODE operation, this RECTANGULAR package with GULL WING terminals is ideal for surface mount designs.
ZVP3310FTA
Zetex Plc
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDSO-G3; No. of Terminals: 3;
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NTGS5120PT1G
NTGS5120PT1G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max ID of 2.5A and 0.111 ohm RDS(on), it offers high performance in a small outline package style.
NTGS3443T1G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; JESD-30 Code: R-PDSO-G6; Minimum DS Breakdown Voltage: 20 V;
NTGS4111PT1G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .63 W; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
NTGS3443T2G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
NTGS4111PT2G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G6; Minimum DS Breakdown Voltage: 30 V; Moisture Sensitivity Level (MSL): 1;
NTGS4141NT1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e0;
NTGS3446T1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; JESD-30 Code: R-PDSO-G6; Maximum Drain-Source On Resistance: .045 ohm;
NTGS3130NT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; JESD-30 Code: R-PDSO-G6; Terminal Position: DUAL;
NTGS3441T1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 1.65 A; Qualification: Not Qualified;
NTGS3446T1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; No. of Terminals: 6; JESD-30 Code: R-PDSO-G6;
NTGS3455T1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Time At Peak Reflow Temperature (s): 30; JESD-30 Code: R-PDSO-G6;
NTGS3441T1G
NTGS3441T1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It has a max Drain Current of 1.65A and an Operating Temperature range from -55 to 150°C. The transistor features a SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR package suitable for surface mount assembly.
NTGS3455T1G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): 2.5 A;
NTGS3441PT1G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Maximum Drain Current (ID): 1.8 A; Terminal Position: DUAL;
NTGS3A033PZT1G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.19 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): 3.8 A;
NTGS1135PT1G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Moisture Sensitivity Level (MSL): 1; Transistor Application: SWITCHING;
NTGS3136PT1G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Operating Mode: ENHANCEMENT MODE; Terminal Form: GULL WING;
NTGS3443T1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Finish: Tin/Lead (Sn80Pb20); Maximum Drain Current (ID): 2.2 A;
NTGS4111PT1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .63 W; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE;
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