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NTGS3130NT1G

Onsemi

NTGS3130NT1G by Onsemi

NTGS3130NT1G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 5.6A Drain Current, and 0.024 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. This small outline transistor operates at up to 150°C with Matte Tin finish and GULL WING terminals.

Median Price

$0.390

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 846 parts In-Stock

1+ parts

$1.220

100+ parts

$0.504

1k+ parts

$0.392

10k+ parts

-

846

$1.220

$0.504

$0.392

-

Rochester

USA . 30,680 parts In-Stock

1+ parts

-

100+ parts

$0.373

1k+ parts

$0.310

10k+ parts

$0.276

30,680

-

$0.373

$0.310

$0.276

Verical

USA . 19,592 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.406

10k+ parts

$0.362

19,592

-

-

$0.406

$0.362

Mouser Electronics

USA . 4,965 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

$0.331

4,965

-

-

-

$0.331

Chip1Stop

Japan . 18 parts In-Stock

1+ parts

-

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-

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18

-

-

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Distributors (In-Stock)

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Digiode

USA . 208 parts In-Stock

1+ parts

$0.305

100+ parts

-

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-

10k+ parts

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208

$0.305

-

-

-

Vyrian

USA . 2,314 parts In-Stock

1+ parts

$0.321

100+ parts

-

1k+ parts

-

10k+ parts

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2,314

$0.321

-

-

-

Bristol Electronics

USA . 979 parts In-Stock

1+ parts

$1.176

100+ parts

$0.435

1k+ parts

$0.329

10k+ parts

-

979

$1.176

$0.435

$0.329

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Chip Stock

USA . 55,000 parts In-Stock

1+ parts

-

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55,000

-

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Dan-Mar Components

USA . 979 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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979

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 172 parts In-Stock

1+ parts

$0.289

100+ parts

-

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-

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172

$0.289

-

-

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Corohmni

South Africa . 299 parts In-Stock

1+ parts

$0.321

100+ parts

-

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-

10k+ parts

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299

$0.321

-

-

-

Component Stockers USA

USA . 27,764 parts In-Stock

1+ parts

$0.330

100+ parts

$0.310

1k+ parts

$0.280

10k+ parts

$0.280

27,764

$0.330

$0.310

$0.280

$0.280

Kepictronics

USA . 28,678 parts In-Stock

1+ parts

-

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28,678

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TANS Electronics

Latvia . 7,553 parts In-Stock

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7,553

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Kulean Microsystems

USA . 6,438 parts In-Stock

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6,438

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Lixinc

USA . 4,985 parts In-Stock

1+ parts

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4,985

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SupplyDigital Components

Austria . 3,284 parts In-Stock

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3,284

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

1+ parts

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100+ parts

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2,700

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-

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UHIMA Technologies

Türkiye . 582 parts In-Stock

1+ parts

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100+ parts

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582

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Problanco Electronics

Mexico . 553 parts In-Stock

1+ parts

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553

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Perfect Parts

USA . 141 parts In-Stock

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141

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Overview

Enhance your electronic projects with the NTGS3130NT1G by Onsemi! This high-quality Small Signal Field Effect Transistor is a versatile component that offers exceptional performance in switching applications. With its N-CHANNEL polarity and SINGLE configuration with BUILT-IN DIODE, this transistor provides efficient operation and reliability. Its compact design and surface mount capability make it easy to integrate into your projects. Trust in Onsemi's reputation for excellence in semiconductor technology and discover the value and benefits that the NTGS3130NT1G can bring to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching operations and better performance.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and provides additional functionality with the built-in diode.

Transistor Application: SWITCHING

Optimized for switching applications, making it suitable for a wide range of electronic devices.

Surface Mount: YES

Enables easy and efficient installation on PCBs, saving space and reducing assembly time.

Operating Mode: ENHANCEMENT MODE

Enhances the transistor's performance and efficiency in operation.

Maximum Drain Current (Abs) (ID): 5.6 A

Capable of handling high levels of current, suitable for demanding applications.

Maximum Power Dissipation (Abs): 1.4 W

Efficiently dissipates heat, ensuring stable performance under various operating conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides reliable and consistent performance, ideal for different electronic applications.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures, suitable for industrial and automotive applications.

Maximum Drain-Source On Resistance: 0.024 ohm

Low on-resistance ensures minimal power loss and efficient switching.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTGS3130NT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

5.6 A

Maximum Drain Current (ID):

4.2 A

Maximum Drain-Source On Resistance:

.024 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTGS3130NT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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