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NSR1030MW2T3G

Onsemi

NSR1030MW2T3G by Onsemi

NSR1030MW2T3G by Onsemi is a Schottky rectifier diode with 30V reverse voltage, 1A output current, and 0.595V forward voltage. It is a small outline package suitable for efficiency applications at up to 125 °C operating temperature. The diode has a max power dissipation of 0.2W and Gull Wing terminals for surface mount installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,411 parts In-Stock

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Vyrian

USA . 1,271 parts In-Stock

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Problanco Electronics

Mexico . 3,462 parts In-Stock

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Corphita

USA . 2,327 parts In-Stock

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SupplyDigital Components

Austria . 2,188 parts In-Stock

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TANS Electronics

Latvia . 2,170 parts In-Stock

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Kulean Microsystems

USA . 1,930 parts In-Stock

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UHIMA Technologies

Türkiye . 479 parts In-Stock

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Corohmni

South Africa . 467 parts In-Stock

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Overview

Unlock the potential of efficiency with the NSR1030MW2T3G by Onsemi. This high-quality rectifier diode offers customers a reliable solution for a wide range of applications. With Onsemi's reputation for excellence in manufacturing, you can trust that this product delivers exceptional performance and value. Whether you're looking to optimize power consumption or improve circuit efficiency, the NSR1030MW2T3G is the perfect choice for your needs. Experience the benefits of cutting-edge technology and seamless integration with this versatile diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and reliability, making this product suitable for long-term use.

Config: SINGLE

The single configuration simplifies the design and implementation of this product, making it easy to incorporate into various electronic systems.

Surface Mount: YES

Being surface mountable makes this product convenient for automated assembly processes, saving time and effort during production.

Maximum Reverse Current: 30 uA

The low maximum reverse current indicates high efficiency and minimal power loss in the circuit, contributing to overall energy savings.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient space utilization and easy placement on printed circuit boards.

Reverse Test Voltage: 10 V

The reverse test voltage of 10 V ensures reliable performance and protection against reverse voltage conditions in the circuit.

No. of Terminals: 2

The two terminals provide a simple connection interface, making it easy to integrate this diode into electronic circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, allowing for compact and efficient circuit designs.

Application: EFFICIENCY

Designed for efficiency, this product is ideal for applications where energy conservation is a priority.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this diode can withstand high-temperature environments, ensuring reliable performance in various conditions.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit connections, allowing for versatile applications of this diode.

Maximum Power Dissipation: 0.2 W

The low maximum power dissipation indicates efficient power handling capabilities, making this diode suitable for high-performance applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is optimized for converting AC to DC power with minimal voltage drops, ensuring reliable power conversion in electronic circuits.

Maximum Forward Voltage (VF): 0.595 V

The low maximum forward voltage of 0.595 V results in minimal voltage drop across the diode, leading to efficient power conversion and reduced energy loss.

Maximum Output Current: 1 A

With a maximum output current of 1 A, this diode can handle high current loads, making it suitable for power supply applications.

Technology: SCHOTTKY

Utilizing Schottky technology, this diode offers fast switching speeds and low forward voltage drop, enhancing overall circuit efficiency and performance.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable connections, making installation and soldering processes easier and more efficient.

Maximum Repetitive Peak Reverse Voltage: 30 V

The high maximum repetitive peak reverse voltage of 30 V ensures protection against reverse voltage spikes, making this diode suitable for demanding applications.

Maximum Non Repetitive Peak Forward Current: 5 A

The high maximum non-repetitive peak forward current of 5 A allows this diode to withstand transient overloads, ensuring robust performance under varying load conditions.

Diode Element Material: SILICON

Being made of silicon, the diode element offers high reliability and temperature resilience, making this product suitable for a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers NSR1030MW2T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.595 V

JESD-30 Code:

R-PDSO-G2

Maximum Non Repetitive Peak Forward Current:

5 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.2 W

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

30 uA

Reverse Test Voltage:

10 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

NSR1030MW2T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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