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NSR10404NXT5G

Onsemi

NSR10404NXT5G by Onsemi

NSR10404NXT5G by Onsemi is a Schottky rectifier diode with 40V reverse test voltage, 0.55V forward voltage, and 1A output current. It is a single-config chip carrier package ideal for applications requiring fast switching and low power dissipation in temperatures up to 150 °C.

Median Price

$0.099

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 70,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.050

70,000

-

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$0.050

Flip Electronics (Authorized)

USA . 70,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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70,000

-

-

-

-

Rochester

USA . 3,875 parts In-Stock

1+ parts

-

100+ parts

$0.107

1k+ parts

$0.089

10k+ parts

$0.079

3,875

-

$0.107

$0.089

$0.079

Verical

USA . 3,875 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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$0.099

3,875

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-

-

$0.099

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 811 parts In-Stock

1+ parts

$0.083

100+ parts

-

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811

$0.083

-

-

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Vyrian

USA . 2,433 parts In-Stock

1+ parts

$0.087

100+ parts

-

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10k+ parts

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2,433

$0.087

-

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Flip Electronics

USA . 70,000 parts In-Stock

1+ parts

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70,000

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DigiKey Marketplace

USA . 70,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.110

10k+ parts

-

70,000

-

-

$0.110

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Chip Stock

USA . 20,000 parts In-Stock

1+ parts

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20,000

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Prism Electronics

USA . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,097 parts In-Stock

1+ parts

$0.078

100+ parts

-

1k+ parts

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10k+ parts

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1,097

$0.078

-

-

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Corohmni

South Africa . 418 parts In-Stock

1+ parts

$0.087

100+ parts

-

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418

$0.087

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TANS Electronics

Latvia . 7,910 parts In-Stock

1+ parts

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7,910

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Kulean Microsystems

USA . 5,701 parts In-Stock

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5,701

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Perfect Parts

USA . 5,533 parts In-Stock

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5,533

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Problanco Electronics

Mexico . 4,007 parts In-Stock

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4,007

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SupplyDigital Components

Austria . 202 parts In-Stock

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202

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UHIMA Technologies

Türkiye . 154 parts In-Stock

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154

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Overview

Experience unparalleled performance and reliability with the NSR10404NXT5G by Onsemi. As a leading manufacturer in the industry, Onsemi brings you top-notch quality diodes & rectifiers that are perfect for a wide range of applications. From automotive electronics to power supplies, this SCHOTTKY technology-based product offers efficient operation, low forward voltage, and high output current capabilities. Trust Onsemi's reputation for excellence and choose the NSR10404NXT5G for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the diode lightweight and durable, ideal for a wide range of applications.

Config: SINGLE

The single configuration simplifies the circuit design and makes it easier to integrate into various electronic devices.

Surface Mount: YES

Surface mounting capability allows for easy installation and saves space on the circuit board.

Maximum Reverse Recovery Time: 0.02 us

The fast reverse recovery time ensures efficient operation and minimizes power loss in the circuit.

Maximum Reverse Current: 40 uA

Low reverse current ensures that minimal power is wasted in the reverse direction, improving overall efficiency.

Package Shape: RECTANGULAR

Rectangular shape simplifies the installation process and provides a secure fit on the circuit board.

Reverse Test Voltage: 40 V

High reverse test voltage ensures the diode can handle voltage spikes and surges effectively.

No. of Terminals: 2

Having only two terminals simplifies the wiring process and reduces the chances of wiring errors.

Package Style (Meter): CHIP CARRIER

Chip carrier package style provides excellent thermal conductivity and makes it suitable for high-power applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the diode to operate efficiently in various environmental conditions.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy connections and ensures a secure fit on the circuit board.

Maximum Power Dissipation: 1.25 W

High power dissipation rating allows the diode to handle high power loads without overheating.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature ensures that the diode remains stable during the soldering process.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for reliable soldering and ensures the diode's longevity.

Diode Type: RECTIFIER DIODE

Rectifier diode is designed for converting AC to DC current with high efficiency, making it suitable for various rectification applications.

Maximum Forward Voltage (VF): 0.55 V

Low forward voltage drop ensures minimal voltage loss across the diode, improving overall efficiency.

Maximum Output Current: 1 A

High output current rating allows the diode to handle large current loads effectively.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low forward voltage drop, making the diode suitable for high-frequency applications.

Terminal Form: NO LEAD

No-lead terminal form simplifies the installation process and enhances the diode's reliability.

Maximum Repetitive Peak Reverse Voltage: 40 V

High repetitive peak reverse voltage ensures the diode can handle voltage spikes repeatedly without damage.

Maximum Non Repetitive Peak Forward Current: 12 A

The high non-repetitive peak forward current rating allows the diode to handle short-term current surges effectively.

Diode Element Material: SILICON

Silicon diode element material offers high reliability and efficiency, making it a popular choice for various electronic applications.

Technical Specifications

Diodes & Rectifiers NSR10404NXT5G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

JESD-30 Code:

R-PBCC-N2

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

12 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

1.25 W

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

40 uA

Maximum Reverse Recovery Time:

.02 us

Reverse Test Voltage:

40 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSR10404NXT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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