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NSR1040MW2T3G

Onsemi

NSR1040MW2T3G by Onsemi

NSR1040MW2T3G by Onsemi is a Schottky rectifier diode with 40V peak reverse voltage, 0.595V forward voltage, and 1A output current. It is a small outline package suitable for efficiency applications at up to 125 °C operating temperature. The diode has a max power dissipation of 0.2W and low reverse current of 25uA, making it ideal for high-performance electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,197 parts In-Stock

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Digiode

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SupplyDigital Components

Austria . 6,107 parts In-Stock

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Kulean Microsystems

USA . 4,372 parts In-Stock

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Problanco Electronics

Mexico . 2,210 parts In-Stock

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Corphita

USA . 1,449 parts In-Stock

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TANS Electronics

Latvia . 1,006 parts In-Stock

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Corohmni

South Africa . 260 parts In-Stock

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UHIMA Technologies

Türkiye . 129 parts In-Stock

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Overview

Unleash the power of efficiency with the NSR1040MW2T3G by Onsemi. This top-of-the-line rectifier diode offers unparalleled quality and reliability, thanks to Onsemi's reputation for excellence in manufacturing. Ideal for a wide range of applications, this diode is designed to maximize performance while minimizing power consumption. Say goodbye to inefficiency and hello to optimized energy usage with the NSR1040MW2T3G - the perfect solution for all your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and allows for easy handling of the diode, making it a reliable choice for various applications.

Config: SINGLE

The single configuration simplifies the setup and installation of the diode, making it convenient for use in circuits and other electronic systems.

Surface Mount: YES

The surface mount feature enables easy integration of the diode on circuit boards, saving space and simplifying assembly processes.

Maximum Reverse Current: 25 uA

The low maximum reverse current ensures minimal power loss in the circuit, improving overall efficiency and performance.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient placement and alignment of the diode on a circuit board, facilitating a neat and organized layout.

No. of Terminals: 2

With only two terminals, the diode setup is straightforward and easy to connect, simplifying the overall circuit design.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it suitable for compact electronic devices or systems.

Application: EFFICIENCY

Designed for efficiency, this diode is ideal for applications where power consumption and performance are critical factors.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the diode to function reliably in various environments, ensuring consistent performance even under elevated temperatures.

Terminal Position: DUAL

The dual terminal position provides flexibility in connecting the diode in different circuit configurations, enhancing compatibility and usability.

Maximum Power Dissipation: 0.2 W

The low maximum power dissipation indicates efficient energy conversion and minimal heat generation, contributing to the overall reliability and longevity of the diode.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting alternating current (AC) to direct current (DC), making it essential for power supply applications.

Maximum Forward Voltage (VF): 0.595 V

The low maximum forward voltage drop ensures minimal power loss and high efficiency in converting AC to DC, making it a cost-effective choice for power supply circuits.

Maximum Output Current: 1 A

Capable of handling high output currents, this diode is suitable for applications that require a reliable and stable power supply.

Technology: SCHOTTKY

The Schottky technology used in this diode offers fast switching speeds and low voltage drops, making it ideal for high-frequency and high-speed applications.

Terminal Form: GULL WING

The gull wing terminal form allows for easy surface mounting on circuit boards, ensuring secure and reliable connections for efficient performance.

Maximum Repetitive Peak Reverse Voltage: 40 V

With a high maximum repetitive peak reverse voltage, this diode can withstand voltage spikes and fluctuations, ensuring stable operation in demanding conditions.

Maximum Non Repetitive Peak Forward Current: 5 A

Capable of handling high peak forward currents for short durations, this diode is suitable for applications with transient power requirements.

Diode Element Material: SILICON

The silicon material used in the diode element ensures reliable performance and durability, making it suitable for a wide range of electronic applications.

Technical Specifications

Diodes & Rectifiers NSR1040MW2T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.595 V

JESD-30 Code:

R-PDSO-G2

Maximum Non Repetitive Peak Forward Current:

5 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.2 W

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

25 uA

Reverse Test Voltage:

10 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

NSR1040MW2T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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