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NSR10T20XV2T5G

Onsemi

NSR10T20XV2T5G by Onsemi

NSR10T20XV2T5G by Onsemi is a Schottky rectifier diode with 20V reverse test voltage, 0.024us reverse recovery time, and 1A max output current. Ideal for applications requiring fast switching speed and low forward voltage drop in compact electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,505 parts In-Stock

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Digiode

USA . 1,436 parts In-Stock

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1,436

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Kulean Microsystems

USA . 5,082 parts In-Stock

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5,082

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SupplyDigital Components

Austria . 4,428 parts In-Stock

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TANS Electronics

Latvia . 4,321 parts In-Stock

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Problanco Electronics

Mexico . 904 parts In-Stock

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Corphita

USA . 840 parts In-Stock

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Corohmni

South Africa . 477 parts In-Stock

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UHIMA Technologies

Türkiye . 77 parts In-Stock

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Overview

Discover the NSR10T20XV2T5G by Onsemi, a top-quality Schottky rectifier diode that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is ideal for a wide range of applications. With a maximum reverse recovery time of 0.024 us and a maximum forward voltage of 0.53 V, this diode delivers exceptional efficiency and precision. Whether you're working on a project that requires high-speed switching or low power consumption, the NSR10T20XV2T5G is the perfect solution. Trust Onsemi to provide innovative technology that exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring reliability in various operating conditions.

Config: SINGLE

Simplified circuit design with a single diode configuration for ease of use and integration.

Surface Mount: YES

Can be easily mounted on circuit boards, saving space and allowing for automated assembly processes.

Maximum Reverse Recovery Time: 0.024 us

Fast recovery time allows for efficient switching and reduces power loss in the circuit.

Maximum Reverse Current: 220 uA

Low reverse current ensures minimal power dissipation and improved efficiency.

Maximum Operating Temperature: 150 °C

Can operate effectively in high temperature environments, making it suitable for a wide range of applications.

Terminal Finish: MATTE TIN

Provides a durable and corrosion-resistant finish on the terminals for long-term reliability.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification applications, ensuring efficient conversion of AC to DC.

Technical Specifications

Diodes & Rectifiers NSR10T20XV2T5G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.53 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

3 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.25 W

Maximum Repetitive Peak Reverse Voltage:

20 V

Maximum Reverse Current:

220 uA

Maximum Reverse Recovery Time:

.024 us

Reverse Test Voltage:

20 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSR10T20XV2T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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