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NSR1020MW2T3G-AU

Onsemi

NSR1020MW2T3G-AU by Onsemi

NSR1020MW2T3G-AU by Onsemi is a Schottky rectifier diode with 30V reverse voltage, 1A output current, and 0.54V forward voltage. It is used for efficiency applications at up to 125 °C operating temperature. The diode has a small outline package style with dual terminals and matte tin finish for surface mount assembly.

Median Price

$0.101

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Nova Conductors

Japan . 10 parts In-Stock

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Vyrian

USA . 1,288 parts In-Stock

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Digiode

USA . 1,014 parts In-Stock

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Problanco Electronics

Mexico . 6,645 parts In-Stock

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TANS Electronics

Latvia . 6,128 parts In-Stock

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Kulean Microsystems

USA . 3,723 parts In-Stock

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UHIMA Technologies

Türkiye . 876 parts In-Stock

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Corphita

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Corohmni

South Africa . 374 parts In-Stock

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SupplyDigital Components

Austria . 73 parts In-Stock

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Overview

Discover the NSR1020MW2T3G-AU by Onsemi, a top-quality Schottky rectifier diode that delivers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for applications requiring high efficiency and precision. With a maximum output current of 1A and a maximum reverse voltage of 30V, this diode offers superior power dissipation and consistent performance. Trust Onsemi to provide you with the best diode for your project needs, ensuring optimal functionality and long-lasting durability. Elevate your projects with the NSR1020MW2T3G-AU by Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the diode, making it suitable for long-term use.

Config: SINGLE

Simplified setup and installation process.

Surface Mount: YES

Allows for compact design and easy PCB integration.

Maximum Reverse Current: 40 uA

Efficient operation with minimal power loss.

Package Shape: RECTANGULAR

Space-saving design for efficient use of board space.

No. of Terminals: 2

Simplified connectivity for hassle-free installation.

Application: EFFICIENCY

Designed for high efficiency applications.

Maximum Operating Temperature: 125 °C

Suitable for operation in a wide range of temperature environments.

Technology: SCHOTTKY

Schottky diode technology offers fast switching speeds and low forward voltage drop.

Technical Specifications

Diodes & Rectifiers NSR1020MW2T3G-AU attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.54 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

5 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

40 uA

Reverse Test Voltage:

15 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSR1020MW2T3G-AU Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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