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NSR15406NXT5G

Onsemi

NSR15406NXT5G by Onsemi

NSR15406NXT5G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.56V and output current of 1.5A. It has a fast reverse recovery time of 0.053us and low reverse current of 75uA, making it ideal for efficiency applications at temperatures up to 150 °C. The diode comes in a chip carrier package style, suitable for surface mount configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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DigiKey

USA . 94,780 parts In-Stock

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Flip Electronics (Authorized)

USA . 94,780 parts In-Stock

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Flip Electronics

USA . 94,780 parts In-Stock

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94,780

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Chip Stock

USA . 33,000 parts In-Stock

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Digiode

USA . 514 parts In-Stock

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514

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Vyrian

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499

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Problanco Electronics

Mexico . 7,369 parts In-Stock

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7,369

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SupplyDigital Components

Austria . 7,231 parts In-Stock

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TANS Electronics

Latvia . 3,944 parts In-Stock

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Corphita

USA . 1,710 parts In-Stock

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Kulean Microsystems

USA . 488 parts In-Stock

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UHIMA Technologies

Türkiye . 392 parts In-Stock

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Corohmni

South Africa . 124 parts In-Stock

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Overview

Unlock the power of efficiency with the NSR15406NXT5G by Onsemi. This high-quality rectifier diode offers a fast reverse recovery time, low reverse current, and a maximum operating temperature of 150 °C, making it ideal for applications where performance and reliability are crucial. With a peak reflow temperature of 260°C and a maximum power dissipation of 1.4W, this diode is built to last. Trust Onsemi's years of expertise in diodes and rectifiers to deliver a product that exceeds expectations. Step up your efficiency game with the NSR15406NXT5G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, ensuring it can withstand various environmental conditions.

Config: SINGLE

Single configuration makes it easy to integrate into circuits and reduces complexity in design.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards.

Maximum Reverse Recovery Time: 0.053 us

Low reverse recovery time ensures efficient switching and performance of the diode.

Maximum Reverse Current: 75 uA

Low reverse current ensures minimal power loss and efficient operation of the diode.

Package Shape: RECTANGULAR

Rectangular shape provides easy handling and placement during assembly.

Application: EFFICIENCY

Designed for efficiency, making it ideal for applications where power management is crucial.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for the diode to be used in various industrial applications.

Terminal Position: BOTTOM

Bottom terminal position enables easy soldering and connection in circuit designs.

Maximum Power Dissipation: 1.4 W

High power dissipation capability ensures the diode can handle heavy loads and operate efficiently.

Peak Reflow Temperature: 260C

Can withstand high peak reflow temperatures during assembly processes.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting AC to DC power efficiently.

Maximum Forward Voltage (VF): 0.56 V

Low forward voltage drop ensures minimal power loss and efficient operation.

Maximum Output Current: 1.5 A

High output current capability makes it suitable for applications requiring higher current handling.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drop, increasing efficiency.

Terminal Form: NO LEAD

No lead terminal form is suitable for surface mount applications and reduces space constraints.

Maximum Repetitive Peak Reverse Voltage: 40 V

Can handle up to 40V of repetitive peak reverse voltage, making it versatile for various applications.

Maximum Non Repetitive Peak Forward Current: 19 A

High non-repetitive peak forward current rating ensures the diode can handle sudden surges in current.

Diode Element Material: SILICON

Silicon material provides reliable performance and stability for the diode's operation.

Technical Specifications

Diodes & Rectifiers NSR15406NXT5G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.56 V

JESD-30 Code:

R-PBCC-N2

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

19 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

1.4 W

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

75 uA

Maximum Reverse Recovery Time:

.053 us

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSR15406NXT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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