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NSR10T406MX2T5G

Onsemi

NSR10T406MX2T5G by Onsemi

NSR10T406MX2T5G by Onsemi is a Schottky rectifier diode with 40V reverse test voltage, 0.15us reverse recovery time, and 1A max output current. Ideal for applications requiring fast switching and low forward voltage drop in small outline packages.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,214 parts In-Stock

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Digiode

USA . 745 parts In-Stock

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745

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TANS Electronics

Latvia . 6,375 parts In-Stock

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6,375

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Kulean Microsystems

USA . 6,135 parts In-Stock

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6,135

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Corphita

USA . 2,030 parts In-Stock

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SupplyDigital Components

Austria . 1,914 parts In-Stock

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UHIMA Technologies

Türkiye . 535 parts In-Stock

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535

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Problanco Electronics

Mexico . 528 parts In-Stock

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528

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Corohmni

South Africa . 133 parts In-Stock

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Overview

Experience superior quality and performance with the NSR10T406MX2T5G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch diodes & rectifiers that are perfect for a wide range of applications. With a maximum reverse recovery time of 0.15 us and a maximum forward voltage of 0.53 V, this product offers exceptional value to customers looking for reliable and efficient components. Trust Onsemi for all your electronic needs and see the difference in quality for yourself.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes installation and maintenance easier as only one unit needs to be dealt with.

Surface Mount: YES

Surface mount capability allows for easy and space-saving integration onto circuit boards.

Maximum Reverse Recovery Time: 0.15 us

Fast reverse recovery time ensures efficient performance and reduces power loss.

Maximum Reverse Current: 10 uA

Low reverse current minimizes power consumption and improves overall efficiency of the product.

Package Shape: RECTANGULAR

Rectangular shape provides a compact and easy-to-handle package.

Reverse Test Voltage: 40 V

High reverse test voltage offers good protection against reverse voltage spikes.

No. of Terminals: 2

Having only 2 terminals simplifies installation and reduces chances of wiring errors.

Package Style (Meter): SMALL OUTLINE

Small outline package saves space on the circuit board and allows for denser designs.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliability and performance under harsh conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for operation in a wide range of environments.

Terminal Position: DUAL

Dual terminal position provides flexibility in mounting and connection options.

Case Connection: CATHODE

Cathode case connection simplifies circuit design and makes it easier to identify the polarity.

Maximum Power Dissipation: 1.5 W

High power dissipation capability allows for handling of higher power levels without damage.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC to DC voltage efficiently.

Maximum Forward Voltage (VF): 0.53 V

Low forward voltage drop ensures minimal power loss during forward conduction.

Maximum Output Current: 1 A

High output current rating allows for handling of higher current loads in the circuit.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drop for improved efficiency.

Terminal Form: NO LEAD

No-lead terminal form simplifies mounting and reduces the risk of solder joint failure.

Maximum Repetitive Peak Reverse Voltage: 40 V

High repetitive peak reverse voltage rating ensures protection against voltage spikes.

Maximum Non Repetitive Peak Forward Current: 9.5 A

High non-repetitive peak forward current allows for handling of occasional high current pulses.

Diode Element Material: SILICON

Silicon diode element material provides reliable and stable performance over a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers NSR10T406MX2T5G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW LEAKAGE CURRENT

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.53 V

JESD-30 Code:

R-XDSO-N2

Maximum Non Repetitive Peak Forward Current:

9.5 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

1.5 W

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

.15 us

Reverse Test Voltage:

40 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NSR10T406MX2T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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