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NSR10F30NXT5G

Onsemi

NSR10F30NXT5G by Onsemi

NSR10F30NXT5G by Onsemi is a SCHOTTKY RECTIFIER DIODE with 30V VR, 1A IF, and 0.42V VF. It's a SINGLE diode in CHIP CARRIER package for rectification applications at up to 125 °C. Suitable for surface mount designs requiring high efficiency and low forward voltage drop.

Median Price

$0.280

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 10,000 parts In-Stock

1+ parts

$0.401

100+ parts

$0.211

1k+ parts

$0.128

10k+ parts

$0.114

10,000

$0.401

$0.211

$0.128

$0.114

Mouser Electronics

USA . 35,000 parts In-Stock

1+ parts

$0.840

100+ parts

$0.314

1k+ parts

$0.189

10k+ parts

$0.124

35,000

$0.840

$0.314

$0.189

$0.124

Verical

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.321

10k+ parts

$0.146

10,000

-

-

$0.321

$0.146

Chip1Stop

Japan . 10,000 parts In-Stock

1+ parts

-

100+ parts

$0.218

1k+ parts

$0.130

10k+ parts

$0.119

10,000

-

$0.218

$0.130

$0.119

Master Electronics

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.240

10k+ parts

$0.119

10,000

-

-

$0.240

$0.119

Rochester

USA . 10 parts In-Stock

1+ parts

-

100+ parts

$0.129

1k+ parts

$0.107

10k+ parts

$0.095

10

-

$0.129

$0.107

$0.095

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 786 parts In-Stock

1+ parts

$0.100

100+ parts

-

1k+ parts

-

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-

786

$0.100

-

-

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Vyrian

USA . 1,409 parts In-Stock

1+ parts

$0.130

100+ parts

-

1k+ parts

-

10k+ parts

-

1,409

$0.130

-

-

-

Flip Electronics

USA . 710,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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710,000

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-

-

-

Chip Stock

USA . 334,500 parts In-Stock

1+ parts

-

100+ parts

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334,500

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,114 parts In-Stock

1+ parts

$0.094

100+ parts

-

1k+ parts

-

10k+ parts

-

1,114

$0.094

-

-

-

Advanced Electronics

New Zealand . 53 parts In-Stock

1+ parts

$0.125

100+ parts

$0.114

1k+ parts

$0.102

10k+ parts

-

53

$0.125

$0.114

$0.102

-

Corohmni

South Africa . 170 parts In-Stock

1+ parts

$0.130

100+ parts

-

1k+ parts

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10k+ parts

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170

$0.130

-

-

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Component Stockers USA

USA . 61 parts In-Stock

1+ parts

$0.130

100+ parts

-

1k+ parts

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10k+ parts

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61

$0.130

-

-

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Metaverse IC Inc.

Canada . 194,955 parts In-Stock

1+ parts

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100+ parts

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194,955

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-

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Authorized Procurement Solutions

USA . 90,000 parts In-Stock

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90,000

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Perfect Parts

USA . 33,431 parts In-Stock

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33,431

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QUARKTWIN TECHNOLOGY LTD

USA . 27,743 parts In-Stock

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27,743

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Kepictronics

USA . 8,000 parts In-Stock

1+ parts

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8,000

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TANS Electronics

Latvia . 5,216 parts In-Stock

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5,216

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Assy Fe

Spain . 3,100 parts In-Stock

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3,100

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

1+ parts

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3,000

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Problanco Electronics

Mexico . 2,741 parts In-Stock

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2,741

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Kulean Microsystems

USA . 2,280 parts In-Stock

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2,280

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SupplyDigital Components

Austria . 957 parts In-Stock

1+ parts

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957

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UHIMA Technologies

Türkiye . 722 parts In-Stock

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722

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Overview

Experience the cutting-edge technology of Onsemi with the NSR10F30NXT5G diode rectifier. Designed for high performance and reliability, this SCHOTTKY diode offers a maximum forward voltage of 0.42V and a maximum output current of 1A, making it ideal for a wide range of applications. With a maximum operating temperature of 125 °C and a package style of CHIP CARRIER, this diode is sure to meet your needs with precision and efficiency. Trust in Onsemi's reputation for quality and innovation, and elevate your projects with the NSR10F30NXT5G diode rectifier.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes installation and usage simpler, reducing complexity and potential points of failure.

Surface Mount: YES

Surface mounting allows for a more compact design and efficient use of PCB space.

Package Shape: RECTANGULAR

Rectangular shape provides stability and easy mounting on PCBs.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the chances of wiring errors.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures, ensuring reliable performance even in demanding conditions.

Maximum Power Dissipation: 1.47 W

High power dissipation capability allows the diode to handle larger loads without overheating.

Diode Type: RECTIFIER DIODE

Rectifier diode type is designed for converting AC to DC efficiently, making it suitable for a wide range of applications.

Maximum Forward Voltage (VF): 0.42 V

Low forward voltage drop ensures minimal power loss and efficient operation.

Maximum Output Current: 1 A

Can handle high output currents, making it suitable for applications requiring high current flow.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drop, ideal for high-frequency applications.

Technical Specifications

Diodes & Rectifiers NSR10F30NXT5G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Case Connection:

ANODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.42 V

JESD-30 Code:

R-XBCC-N2

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

18 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

1 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

1.47 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSR10F30NXT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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