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NSR10F20NXT5G

Onsemi

NSR10F20NXT5G by Onsemi

NSR10F20NXT5G by Onsemi is a Schottky rectifier diode with 20V reverse voltage, 1A output current, and 0.4V forward voltage. It is ideal for applications requiring high efficiency power conversion in compact electronic devices due to its small chip carrier package and surface mount capability.

Median Price

$0.152

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,004 parts In-Stock

1+ parts

$0.140

100+ parts

$0.098

1k+ parts

$0.095

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1,004

$0.140

$0.098

$0.095

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Newark

USA . 3,813 parts In-Stock

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$0.164

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$0.164

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Mouser Electronics

USA . 24,227 parts In-Stock

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$0.600

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$0.240

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$0.152

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24,227

$0.600

$0.240

$0.152

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DigiKey

USA . 11,127 parts In-Stock

1+ parts

$0.630

100+ parts

$0.248

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$0.168

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$0.151

11,127

$0.630

$0.248

$0.168

$0.151

Rochester

USA . 1,109,310 parts In-Stock

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Verical

USA . 605,000 parts In-Stock

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$0.119

605,000

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$0.119

Chip1Stop

Japan . 8,124 parts In-Stock

1+ parts

-

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$0.117

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$0.090

10k+ parts

$0.082

8,124

-

$0.117

$0.090

$0.082

Farnell

UK . 4,078 parts In-Stock

1+ parts

-

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$0.113

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$0.105

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$0.101

4,078

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$0.113

$0.105

$0.101

Element14

Singapore . 4,078 parts In-Stock

1+ parts

-

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$0.197

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$0.191

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$0.187

4,078

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$0.197

$0.191

$0.187

Distributors (In-Stock)

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Vyrian

USA . 2,272 parts In-Stock

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$0.092

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Digiode

USA . 826 parts In-Stock

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$0.100

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826

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Flip Electronics

USA . 95,000 parts In-Stock

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Chip Stock

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Cyclops Electronics Ltd

UK . 9,345 parts In-Stock

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Sensible Micro Corp

USA . 524 parts In-Stock

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ComSIT Distribution GmbH

Germany . 98 parts In-Stock

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Corohmni

South Africa . 163 parts In-Stock

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$0.079

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$0.079

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Corphita

USA . 1,572 parts In-Stock

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$0.094

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Continental Prestige Electronics

USA . 1,110,410 parts In-Stock

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$0.095

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Perfect Parts

USA . 25,928 parts In-Stock

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Kepictronics

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TANS Electronics

Latvia . 8,252 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,717 parts In-Stock

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SupplyDigital Components

Austria . 5,534 parts In-Stock

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Kulean Microsystems

USA . 4,332 parts In-Stock

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Problanco Electronics

Mexico . 3,125 parts In-Stock

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Infinite Electronics LLP (Excess)

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Lixinc

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UHIMA Technologies

Türkiye . 981 parts In-Stock

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Futuretech Components

Singapore . 523 parts In-Stock

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Overview

Discover the ultimate solution for your power management needs with the NSR10F20NXT5G by Onsemi. Designed with precision and quality in mind, this SCHOTTKY RECTIFIER DIODE offers unparalleled performance and reliability. Whether you're looking to enhance your electronic devices or improve efficiency in your systems, this product is the perfect choice. Say goodbye to power fluctuations and hello to seamless operation with the NSR10F20NXT5G. Trust in Onsemi's reputation for excellence and experience the difference for yourself.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes it easy to integrate into various circuit designs.

Surface Mount: YES

Surface mount design allows for compact and space-saving installations.

Package Shape: RECTANGULAR

Rectangular shape provides easy handling and placement during assembly.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process.

Package Style (Meter): CHIP CARRIER

Chip carrier package style is suitable for high-density mounting applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliability under various conditions.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB layout and soldering.

Case Connection: ANODE

Anode case connection simplifies the circuit design and layout.

Maximum Power Dissipation: 1.47 W

High power dissipation rating allows for efficient handling of power.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time reduces the risk of thermal damage during assembly.

Peak Reflow Temperature °C: 260

Peak reflow temperature ensures proper soldering and stability.

Diode Type: RECTIFIER DIODE

Rectifier diode type provides efficient rectification of current flow.

Maximum Forward Voltage (VF): 0.4 V

Low forward voltage minimizes power loss and improves efficiency.

Maximum Output Current: 1 A

High output current handling capability makes it suitable for various applications.

Technology: SCHOTTKY

Schottky technology offers faster switching speeds and lower forward voltage drop.

Terminal Form: NO LEAD

No lead terminal form eliminates the risk of lead contamination.

Maximum Repetitive Peak Reverse Voltage: 20 V

High maximum reverse voltage rating ensures protection against reverse voltage conditions.

Maximum Non Repetitive Peak Forward Current: 18 A

High non-repetitive peak forward current handling capability for surge protection.

Diode Element Material: SILICON

Silicon diode element material offers good thermal properties and reliability.

Technical Specifications

Diodes & Rectifiers NSR10F20NXT5G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Case Connection:

ANODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.4 V

JESD-30 Code:

R-XBCC-N2

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

18 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

1.47 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSR10F20NXT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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