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NSR1020MW2T1G

Onsemi

NSR1020MW2T1G by Onsemi

NSR1020MW2T1G by Onsemi is a Schottky rectifier diode with 30V reverse voltage, 1A output current, and 0.54V forward voltage. It is used for efficiency applications due to its small outline package style and matte tin terminal finish. Operating at up to 125°C, it offers high performance in a compact design.

Median Price

$0.050

Lifecycle Status

Suppliers In-Stock

30

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 11 parts In-Stock

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$0.260

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Mouser Electronics

USA . 224 parts In-Stock

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$0.400

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$0.142

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$0.089

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$0.078

224

$0.400

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$0.078

Newark

USA . 576,000 parts In-Stock

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$0.046

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Chip1Stop

Japan . 93,000 parts In-Stock

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Verical

USA . 87,000 parts In-Stock

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Farnell

UK . 26,907 parts In-Stock

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Rochester

USA . 11,000 parts In-Stock

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$0.042

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$0.035

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$0.031

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$0.042

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Flip Electronics (Authorized)

USA . 3,000 parts In-Stock

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RS (Exports)

UK . 2,200 parts In-Stock

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$0.078

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Distrelec

Netherlands . 2,188 parts In-Stock

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Digiode

USA . 1,140 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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TME

Poland . 165 parts In-Stock

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$0.260

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$0.099

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$0.058

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$0.044

165

$0.260

$0.099

$0.058

$0.044

Freelance Electronics

USA . 8 parts In-Stock

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$0.525

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$0.525

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Chip Stock

USA . 190,500 parts In-Stock

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Semtec, LLC

USA . 36,300 parts In-Stock

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IBS Electronics

USA . 33,000 parts In-Stock

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$0.041

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Cyclops Electronics Ltd

UK . 15,313 parts In-Stock

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Vyrian

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NAC Semi

USA . 6,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 4,205 parts In-Stock

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ComSIT USA

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Flip Electronics

USA . 3,000 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 2,758 parts In-Stock

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Bristol Electronics

USA . 1,897 parts In-Stock

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Atlantic Semiconductor

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Cogito LLC

Ukraine . 323 parts In-Stock

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Bas Electronics GmbH & Co. KG

Germany . 171 parts In-Stock

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Prism Electronics

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ACDS - Activité Composants Distribution Service

France . 16 parts In-Stock

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Corphita

USA . 1,895 parts In-Stock

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$0.031

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Corohmni

South Africa . 314 parts In-Stock

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314

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Ampacity Inc.

Singapore . 43,164 parts In-Stock

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$0.059

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Semicontronic

India . 42,861 parts In-Stock

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Argo Parts USA

USA . 437 parts In-Stock

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$0.079

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$0.076

437

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Aztec Data Supply Inc.

USA . 221 parts In-Stock

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$0.091

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Advanced Electronics

New Zealand . 10 parts In-Stock

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Continental Prestige Electronics

USA . 33,818 parts In-Stock

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$0.332

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$0.128

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$0.056

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Authorized Procurement Solutions

USA . 141,000 parts In-Stock

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RC Electronics

USA . 120,972 parts In-Stock

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Perfect Parts

USA . 90,718 parts In-Stock

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GreenTree Electronics

Israel . 63,000 parts In-Stock

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Kepictronics

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Eastek

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Futuretech Components

Singapore . 15,000 parts In-Stock

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Kulean Microsystems

USA . 7,584 parts In-Stock

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Lixinc

USA . 7,506 parts In-Stock

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Problanco Electronics

Mexico . 4,343 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

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TANS Electronics

Latvia . 1,296 parts In-Stock

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SupplyDigital Components

Austria . 830 parts In-Stock

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UHIMA Technologies

Türkiye . 674 parts In-Stock

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Overview

Enhance the efficiency of your electronic devices with the NSR1020MW2T1G by Onsemi. Manufactured with top-quality materials and cutting-edge technology, this rectifier diode offers unmatched performance in a compact package. Ideal for a wide range of applications, this Schottky diode provides a maximum output current of 1A and a maximum forward voltage of 0.54V, ensuring optimal functionality and reliability. Upgrade your devices today with the NSR1020MW2T1G and experience the difference in efficiency and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a long product lifespan.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Maximum Forward Voltage (VF): 0.54 V

Low forward voltage drop leads to higher efficiency and reduced power loss.

Technology: SCHOTTKY

Schottky diodes offer fast switching speeds and lower forward voltage drop compared to standard diodes.

Maximum Repetitive Peak Reverse Voltage: 30 V

Suitable for applications requiring voltage regulation and protection.

Technical Specifications

Diodes & Rectifiers NSR1020MW2T1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.54 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

5 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

40 uA

Reverse Test Voltage:

15 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSR1020MW2T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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