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NSR10F40QNXT5G

Onsemi

NSR10F40QNXT5G by Onsemi

NSR10F40QNXT5G by Onsemi is a Schottky rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 40V. It is designed for applications requiring low forward voltage (0.42V) such as power supplies, converters, and battery chargers. The diode's small outline package makes it suitable for surface mount PCB designs in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 56,000 parts In-Stock

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Vyrian

USA . 7,412 parts In-Stock

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Digiode

USA . 2,248 parts In-Stock

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AZTECH Wire

Italy . 1,115 parts In-Stock

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$16.100

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Component Stockers USA

USA . 485 parts In-Stock

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$99.990

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Kepictronics

USA . 105,000 parts In-Stock

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Problanco Electronics

Mexico . 5,567 parts In-Stock

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Kulean Microsystems

USA . 2,356 parts In-Stock

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TANS Electronics

Latvia . 1,393 parts In-Stock

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Corphita

USA . 1,252 parts In-Stock

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UHIMA Technologies

Türkiye . 890 parts In-Stock

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Corohmni

South Africa . 362 parts In-Stock

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SupplyDigital Components

Austria . 164 parts In-Stock

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Overview

Experience superior quality and performance with the NSR10F40QNXT5G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures reliability and durability in their products. This Schottky rectifier diode is perfect for various applications requiring high efficiency and low forward voltage drop. Its small outline package makes it ideal for surface-mount designs. With a maximum output current of 1A and a peak repetitive reverse voltage of 40V, this diode offers unmatched value and benefits to customers looking for high-performance components. Choose Onsemi for cutting-edge technology and exceptional results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection to the diode, making it suitable for various applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and space in the manufacturing process.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on PCB and allows for high component density, ideal for compact electronic devices.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable performance even in challenging environmental conditions.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC to DC current, making it versatile for various power supply applications.

Technology: SCHOTTKY

Schottky diode technology offers lower forward voltage drop and faster switching speeds, improving efficiency and performance.

Maximum Repetitive Peak Reverse Voltage: 40 V

High maximum repetitive peak reverse voltage ensures the diode can handle reverse voltage spikes without damage, enhancing reliability.

Technical Specifications

Diodes & Rectifiers NSR10F40QNXT5G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.42 V

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

18 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

NSR10F40QNXT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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