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NLX3G17FMUTCG

Onsemi

NLX3G17FMUTCG by Onsemi

NLX3G17FMUTCG by Onsemi is a CMOS Logic Gate with 3 functions, featuring a propagation delay of 7.6 ns at 2.3V supply voltage. Ideal for military applications due to its Schmitt Trigger technology and operating temperature range from -55 °C to 125°C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,620 parts In-Stock

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Vyrian

USA . 857 parts In-Stock

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Problanco Electronics

Mexico . 8,252 parts In-Stock

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SupplyDigital Components

Austria . 8,193 parts In-Stock

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TANS Electronics

Latvia . 5,647 parts In-Stock

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Corphita

USA . 2,468 parts In-Stock

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Kulean Microsystems

USA . 1,790 parts In-Stock

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UHIMA Technologies

Türkiye . 487 parts In-Stock

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Corohmni

South Africa . 114 parts In-Stock

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Overview

Experience the next level of performance with the NLX3G17FMUTCG by Onsemi. Crafted with precision and expertise, this logic gate offers unmatched reliability and efficiency for a wide range of applications. From industrial automation to consumer electronics, this versatile product delivers exceptional value, benefits, and advantages to customers looking for high-quality components. Trust in Onsemi's reputation for excellence and elevate your projects with the NLX3G17FMUTCG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product.

Propagation Delay At Nominal Supply: 7.6 ns

Low propagation delay ensures fast processing speed, making this product suitable for applications requiring quick response times.

Surface Mount: YES

Surface mount capability makes it easy to integrate this logic gate into circuit boards, saving space and simplifying assembly.

No. of Functions: 3

Having multiple functions in one component saves board space and reduces overall cost in a circuit design.

Nominal Supply Voltage / Vsup (V): 2.3

The nominal supply voltage of 2.3V makes this product energy-efficient and suitable for low-power applications.

Load Capacitance (CL): 50 pF

Suitable load capacitance ensures stable operation and compatibility with a variety of circuit configurations.

Power Supplies (V): 3.3

Support for multiple power supplies allows flexibility in designing circuits with different voltage requirements.

No. of Terminals: 8

Having 8 terminals provides ample connectivity options for integrating this logic gate into various circuit designs.

Maximum I (ol): 24 Amp

High maximum output current capacity makes this product suitable for driving strong loads in a circuit.

Propagation Delay (tpd): 9.1 ns

Although slightly higher than nominal delay, the overall propagation delay of 9.1 ns is still fast enough for many applications.

Maximum Operating Temperature: 125 °C

Wide temperature range of operation makes this logic gate suitable for use in harsh environments or industrial applications.

Minimum Operating Temperature: -55 °C

Ability to operate at extremely low temperatures expands the range of applications where this logic gate can be used.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit board layout and connection options.

Maximum Seated Height: 0.55 mm

Low seated height makes this product suitable for applications where space is limited or where a compact design is required.

Width: 1 mm

Compact width allows for efficient use of board space and easy integration into tight layouts.

Minimum Supply Voltage (Vsup): 1.65 V

Support for low supply voltage ensures compatibility with a wide range of power sources and helps in reducing power consumption.

Length: 1.45 mm

Compact length ensures that this logic gate can fit into small spaces and allows for densely packed circuit designs.

Temperature Grade: MILITARY

Military-grade temperature rating indicates high reliability and performance in extreme conditions.

Schmitt Trigger: YES

Inclusion of Schmitt trigger allows for noise immunity and stable output even in noisy environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this logic gate energy-efficient and reliable.

Terminal Form: NO LEAD

Lead-free terminal form complies with environmental regulations and ensures compatibility with lead-free soldering processes.

Packing Method: TR

TR packing method provides convenient packaging for easy handling and storage of this logic gate.

Terminal Pitch: 0.35 mm

Fine terminal pitch allows for high-density mounting and precise connections in circuit board design.

Maximum Supply Voltage (Vsup): 5.5 V

The high maximum supply voltage of 5.5V provides flexibility in designing circuits that require higher voltage levels.

Technical Specifications

Logic Gates NLX3G17FMUTCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

3G

JESD-30 Code:

R-PDSO-N8

Length:

1.45 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

3

No. of Inputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

7.6 ns

Propagation Delay (tpd):

9.1 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLX3G17FMUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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