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NLX3G17CMX1TCG

Onsemi

NLX3G17CMX1TCG by Onsemi

NLX3G17CMX1TCG by Onsemi is a CMOS Logic Gate with 3 functions, 7.6 ns propagation delay, and 50 pF load capacitance. Ideal for military applications due to its Schmitt Trigger feature and wide operating temperature range from -55 °C to 125°C. Surface mountable with a small outline package style, it operates at supply voltages ranging from 1.65V to 5.5V.

Median Price

$0.153

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 90,000 parts In-Stock

1+ parts

-

100+ parts

$0.159

1k+ parts

$0.132

10k+ parts

$0.117

90,000

-

$0.159

$0.132

$0.117

Verical

USA . 84,000 parts In-Stock

1+ parts

-

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$0.147

84,000

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-

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$0.147

Distributors (In-Stock)

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Digiode

USA . 1,630 parts In-Stock

1+ parts

$0.124

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1,630

$0.124

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Vyrian

USA . 715 parts In-Stock

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$0.130

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715

$0.130

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J2 Sourcing AB

Sweden . 36,000 parts In-Stock

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36,000

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Sunrise Surplus Inc.

USA . 38 parts In-Stock

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38

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Distributors (Availability)

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Corphita

USA . 2,355 parts In-Stock

1+ parts

$0.117

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2,355

$0.117

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Vigor

Singapore . 130 parts In-Stock

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$0.120

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130

$0.120

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Corohmni

South Africa . 378 parts In-Stock

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$0.130

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378

$0.130

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Continental Prestige Electronics

USA . 90,000 parts In-Stock

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$0.113

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$0.113

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Kulean Microsystems

USA . 6,598 parts In-Stock

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6,598

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SupplyDigital Components

Austria . 1,760 parts In-Stock

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1,760

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UHIMA Technologies

Türkiye . 646 parts In-Stock

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Perfect Parts

USA . 568 parts In-Stock

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Microchip USA

USA . 348 parts In-Stock

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348

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Problanco Electronics

Mexico . 325 parts In-Stock

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325

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TANS Electronics

Latvia . 215 parts In-Stock

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Overview

Experience the superior quality and innovation of Onsemi with the NLX3G17CMX1TCG Logic Gates. With a fast propagation delay and Schmitt Trigger technology, this product offers exceptional performance in various applications. From industrial machinery to automotive electronics, this versatile component ensures reliable operation and efficiency. Trust Onsemi for cutting-edge technology and unmatched reliability. Elevate your projects with the NLX3G17CMX1TCG Logic Gates today.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 7.6 ns

Low propagation delay ensures fast response time, making this product suitable for applications requiring quick signal processing.

No. of Functions: 3

Having multiple functions in a single component reduces the need for additional components, saving space and simplifying circuit design.

Nominal Supply Voltage / Vsup (V): 2.3

Operates at a low nominal supply voltage, which can help in reducing power consumption and heat dissipation.

Maximum Operating Temperature: 125 °C

Can withstand high operating temperatures, making it suitable for use in harsh environments or applications where temperature fluctuations are common.

Schmitt Trigger: YES

Incorporation of Schmitt Trigger ensures noise immunity and hysteresis, improving the reliability and stability of the circuit.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and fast switching speeds, making it a versatile and efficient choice for logic gates.

Technical Specifications

Logic Gates NLX3G17CMX1TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

3G

JESD-30 Code:

S-XDSO-N8

JESD-609 Code:

e4

Length:

1.45 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

3

No. of Inputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC8,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

7.6 ns

Propagation Delay (tpd):

9.1 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

.4 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLX3G17CMX1TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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