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NLX3G17DMUTCG

Onsemi

NLX3G17DMUTCG by Onsemi

NLX3G17DMUTCG by Onsemi is a CMOS Logic Gate with 3 functions, 7.6 ns propagation delay, and 50 pF load capacitance. Ideal for military applications due to its Schmitt Trigger technology and wide operating temperature range from -55 °C to 125°C. This surface-mount device has a small outline package with very thin profile, making it suitable for compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 628 parts In-Stock

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Kulean Microsystems

USA . 7,352 parts In-Stock

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SupplyDigital Components

Austria . 5,185 parts In-Stock

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TANS Electronics

Latvia . 2,881 parts In-Stock

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Problanco Electronics

Mexico . 1,338 parts In-Stock

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UHIMA Technologies

Türkiye . 855 parts In-Stock

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Corohmni

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Corphita

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Overview

Elevate your electronics projects with the NLX3G17DMUTCG by Onsemi, a high-quality logic gate that delivers exceptional performance and reliability. Manufactured by the reputable brand Onsemi, this product is designed for maximum efficiency and precision. With its compact size and advanced technology, this logic gate is perfect for a wide range of applications in the military industry. Experience seamless operation and enhanced functionality with the NLX3G17DMUTCG by Onsemi, setting a new standard in electronic components. Upgrade your projects today and unlock endless possibilities with this innovative product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and resistance to environmental factors, making this product suitable for a wide range of applications.

Propagation Delay At Nominal Supply: 7.6 ns

The low propagation delay ensures fast and efficient operation, making this product ideal for high-speed applications.

Surface Mount: YES

The surface mount feature allows for easy installation and soldering, making this product convenient for industrial manufacturing processes.

No. of Functions: 3

Having multiple functions in one component saves space and simplifies circuit design, making this product efficient and cost-effective.

Nominal Supply Voltage / Vsup (V): 2.3

The low nominal supply voltage helps in reducing power consumption, making this product energy-efficient.

Load Capacitance (CL): 50 pF

The specified load capacitance ensures compatibility with a wide range of devices, making this product versatile in various circuit configurations.

Power Supplies (V): 3.3

The specified power supply voltage makes this product compatible with common voltage standards, ensuring ease of integration in existing systems.

No. of Terminals: 8

Having sufficient terminals allows for flexible connectivity options, making this product adaptable to different circuit configurations.

Maximum I (ol): 24 Amp

The high maximum output current capability enables this product to drive demanding loads, making it suitable for power-intensive applications.

Schmitt Trigger: YES

The inclusion of a Schmitt trigger helps in reducing noise susceptibility and ensuring signal stability, making this product reliable in noisy environments.

Technology: CMOS

The CMOS technology used in this product offers low power consumption and high noise immunity, making it ideal for battery-operated devices and digital circuits.

Temperature Grade: MILITARY

The military-grade temperature rating ensures reliable operation in harsh environments with extreme temperature fluctuations, making this product suitable for rugged applications.

Technical Specifications

Logic Gates NLX3G17DMUTCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

3G

JESD-30 Code:

R-PDSO-N8

Length:

1.95 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

3

No. of Inputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

7.6 ns

Propagation Delay (tpd):

9.1 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLX3G17DMUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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