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NLX3G17AMX1TCG

Onsemi

NLX3G17AMX1TCG by Onsemi

NLX3G17AMX1TCG by Onsemi is a CMOS Logic Gate with 7.6ns Propagation Delay, 3 Functions, and 50pF Load Capacitance. Ideal for military applications due to its Schmitt Trigger feature and operating temperature range of -55 °C to 125°C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 2,410 parts In-Stock

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AZTECH Wire

Italy . 561 parts In-Stock

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Kulean Microsystems

USA . 2,704 parts In-Stock

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TANS Electronics

Latvia . 1,984 parts In-Stock

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SupplyDigital Components

Austria . 1,840 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 619 parts In-Stock

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Microchip USA

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Problanco Electronics

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Vigor

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Corohmni

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Overview

Discover the NLX3G17AMX1TCG by Onsemi, a cutting-edge Logic Gates product designed for high performance and reliability. With a focus on quality and precision, Onsemi delivers unmatched advantages in the realm of semiconductor technology. Ideal for a wide range of applications, this innovative product offers exceptional value to customers seeking efficiency and consistency in their electronic devices. Experience the benefits of enhanced functionality and seamless integration with the NLX3G17AMX1TCG, setting new standards in the industry.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 7.6 ns

Low propagation delay ensures quick response times in processing signals, making this product suitable for applications requiring fast operation.

Surface Mount: YES

Being surface mountable allows for easy and convenient PCB assembly, saving time and effort during production.

No. of Functions: 3

Having multiple functions in a single device can help save space on the PCB and reduce overall component count, simplifying the circuit design.

Nominal Supply Voltage / Vsup (V): 2.3

Operating at a low supply voltage of 2.3V makes it energy efficient and suitable for battery-powered devices or applications where power consumption is a concern.

Minimum Operating Temperature: -55 °C

With a wide operating temperature range, this product can be used in harsh environments or industrial applications where temperature extremes are common.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high noise immunity, making this product reliable and energy efficient.

Technical Specifications

Logic Gates NLX3G17AMX1TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

3G

JESD-30 Code:

R-XDSO-N8

JESD-609 Code:

e4

Length:

1.95 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

3

No. of Inputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC8,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

7.6 ns

Propagation Delay (tpd):

9.1 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

.4 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLX3G17AMX1TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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