Loading...

NLX3G16FMUTCG

Onsemi

NLX3G16FMUTCG by Onsemi

NLX3G16FMUTCG by Onsemi is a CMOS Logic Gates IC with 12ns Propagation Delay, suitable for military applications. It operates at 1.8V nominal voltage and has 8 terminals in a small outline package. With surface mount capability, it offers fast response time and low power consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,765 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,765

-

-

-

-

Digiode

USA . 970 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

970

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 302 parts In-Stock

1+ parts

$8.420

100+ parts

-

1k+ parts

-

10k+ parts

-

302

$8.420

-

-

-

Component Stockers USA

USA . 717 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

717

$99.990

-

-

-

Kulean Microsystems

USA . 6,858 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,858

-

-

-

-

SupplyDigital Components

Austria . 6,352 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,352

-

-

-

-

Problanco Electronics

Mexico . 3,194 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,194

-

-

-

-

Corphita

USA . 871 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

871

-

-

-

-

UHIMA Technologies

Türkiye . 810 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

810

-

-

-

-

TANS Electronics

Latvia . 661 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

661

-

-

-

-

Microchip USA

USA . 455 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

455

-

-

-

-

Corohmni

South Africa . 137 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

137

-

-

-

-

Overview

Experience the superior quality and reliability of Onsemi with the NLX3G16FMUTCG Logic Gates. Designed for a wide range of applications, this product offers exceptional performance and precision, making it the perfect choice for your electronic projects. With a compact design and advanced features, this logic gate provides unmatched value and benefits to customers looking for a high-quality solution. Trust Onsemi to deliver top-notch products that exceed expectations and elevate your work to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for compact electronic applications.

Propagation Delay At Nominal Supply: 12 ns

The low propagation delay ensures fast signal processing, making this product suitable for high-speed applications.

Surface Mount: YES

Being surface mountable makes installation and soldering easier, and also saves space on the circuit board.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a low supply voltage of 1.8V, making it energy-efficient and suitable for battery-powered devices.

Power Supplies (V): 1.8/5

Supports multiple power supply options, allowing flexibility in design and compatibility with different systems.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this product efficient and reliable.

Technical Specifications

Logic Gates NLX3G16FMUTCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

3G

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e4

Length:

1.45 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

3

No. of Inputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

12 ns

Propagation Delay (tpd):

12 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLX3G16FMUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 17